hn58c65 Renesas Electronics Corporation., hn58c65 Datasheet - Page 13

• Manufacturer Part Number: hn58c65
• Description: 8192-word X 8-bit Electrically Erasable And Programmable Cmos Rom
• Manufacturer: Renesas Electronics Corporation.

WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE and data is latched by the rising
edge of WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
Data Protection
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to progam
mode by mistake. To prevent this phenomenon, this device has a noise cancelation function that cuts
noise if its width is 20 ns or less in program mode. Be careful not to allow noise of a width of more than
20 ns on the control pins.
5
cycles in case of the page programming and 3
4
cycles.
WE
CE
OE
20 ns max
13
10
0 V
5 V
0 V
3
5 V
cycles in case of byte programming
HN58C65 Series