hn58v66ati-10e Renesas Electronics Corporation., hn58v66ati-10e Datasheet - Page 19

• Manufacturer Part Number: hn58v66ati-10e
• Description: 64k Eeprom 8-kword X 8-bit Ready/busy Function, Res Function Hn58v66a Wide Temperature Range Version
• Manufacturer: Renesas Electronics Corporation.

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30 µs from the preceding falling edge of
input data are written into the EEPROM.
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
RDY/
impedance except in write cycle and is lowered to V
cycle, the RDY/
When
keeping
doesn’t provide a latch function.
Rev.3.00, Feb.02.2004, page 19 of 26
or
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
Signal (only the HN58V66A series)
Polling
is kept high for 100 µs after data input, the EEPROM enters write mode automatically and the
signal also allows status of the EEPROM to be determined. The RDY/
is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by
Signal
low when V
V
RES
CC
signal changes state to high impedance.
CC
is switched.
Program inhibit
Read inhibit
should be high during read and programming because it
OL
Read inhibit
Program inhibit
after the first write signal. At the end of a write
signal has high
or
. When