m52s32321a Elite Semiconductor Memory Technology Inc., m52s32321a Datasheet - Page 4

• Manufacturer Part Number: m52s32321a
• Description: 512k X 32bit X 2banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note: 1.Measured with outputs open. Addresses are changed only one time during t
Elite Semiconductor Memory Technology Inc.
Self Refresh Current
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Active Standby Current
in power-down mode
Active Standby Current
Operating Current
(Burst Mode)
Deep Power Down
Current
in non power-down
mode
(One Bank Active)
Refresh Current
2.Refresh period is 64ms. Addresses are changed only one time during t
Parameter
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2P
CC2PS
CC2N
CC2NS
CC3P
CC3PS
CC3N
CC3NS
CC4
CC5
CC7
CC6
Burst Length = 1
t
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 2clks
All other pins
CKE
Input signals are stable
I
All Band Activated, tCCD = tCCD (min)
t
CKE
CKE
RC
OL
RC
= 0 mA, Page Burst
≥
≥
≤
≤
≥
≥
≤
≥
≥
t
≤
≤
RC
t
≤
RC
V
V
V
V
V
V
V
0.2V
0.2V
(min)
IL
IL
IH
IH
IL
IH
IH
V
(min), t
(max), t
(max), CLK
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
IL
(max), CLK
≥
Test Condition
CC
CC
CC
V
DD
≥
=15ns
=15ns
≤
≥
≥
-0.2V or
≤
≤
t
CC
V
V
V
V
A
≤
V
IL
IH
IL
IL
= 0
(min), I
(max), t
IH
(max), t
(min), t
(max), t
V
(min), t
IL
°
(max), t
C
≤
~ 70
OL
CC
CC
CC
0.2V
CC
TCSR range
CC
= 0mA
=15ns
=
=
2 Banks
=15ns
=
1 Bank
CC
°
∞
C
∞
∞
=
CC
)
(min).
∞
CC
(min).
100
100
40
-6
Revision : 1.5
Publication Date : Jan. 2009
180
160
45
M52S32321A
Version
-7.5
0.3
0.2
1.5
80
15
80
40
15
9
8
2
8
200
180
70
-10
60
60
40
4/29
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
°
uA
uA
C
1
2
1