m52s32162a Elite Semiconductor Memory Technology Inc., m52s32162a Datasheet - Page 3

• Manufacturer Part Number: m52s32162a
• Description: 1m X 16bit X 2banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
ABSOLUTE MAXIMUM RATINGS
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note : 1.V
CAPACITANCE (V
Elite Semiconductor Memory Technology Inc.
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
N.C/RFU
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
RAS , CAS , WE , CS , CKE, LDQM,
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
2.V
3.Any input 0V
4.Dout is disabled, 0V
Parameter
IH
IL
(max) = 3.0V AC for pulse width
DD
(min) = -1.0V AC for pulse width
Parameter
DQ0 ~DQ15
supply relative to V
ADDRESS
Data Input / Output
Power Supply/Ground
Data Output Power/Ground
No Connection/
Reserved for Future Use
CLOCK
UDQM
Pin
DD
≤
V
= 2.5V, T
IN
≤
SS
≤
V
V
SS
DDQ
OUT
A
V
, all other pins are not under test = 0V.
Symbol
= 25
DD
≤
V
V
V
V
I
I
,V
OL
OH
OL
IL
IH
IL
V
DDQ
DDQ
°
C
≤
≤
V
V
Symbol
.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
, f = 1MHz)
DD
IN
3ns acceptable.
3ns acceptable.
T
I
P
,V
,V
STG
OS
Symbol
D
OUT
DDQ
C
C
C
0.8 x V
C
V
ADD
OUT
CLK
IN
DDQ -
Min
-0.3
2.3
-5
-5
-
SS
0.2
DDQ
= 0V, T
A
= 0
Typ
-55 ~ + 150
2.5
2.5
-1.0 ~ 3.6
-1.0 ~ 3.6
Min
°
0
-
-
-
-
C
-
-
-
-
Value
0.7
50
~ 70
°
C
)
V
DDQ
Max
2.7
0.3
0.2
5
5
-
Revision : 1.4
+0.3
Publication Date : Dec. 2008
Max
4.0
4.0
4.0
6.0
M52S32162A
Unit
uA
uA
V
V
V
V
V
Unit
°
mA
W
V
V
C
I
I
OH
OL
Unit
pF
pF
pF
pF
= 0.1mA
Note
=-0.1mA
3/30
1
2
3
4