fds8958a-nf073 Fairchild Semiconductor, fds8958a-nf073 Datasheet - Page 3

• Manufacturer Part Number: fds8958a-nf073
• Description: Fds8958a Dual N & P-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
I
V
t
Q
Starting TJ = 25°C, L = 3mH, I
the drain pins. R
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
d(on)
r
d(off)
f
S
rr
θJA
SD
g
gs
gd
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
θJC
is guaranteed by design while R
a) 78°/W when
Parameter
mounted on a
0.5 in
copper
AS
AS
= 3A, V
= 6A, V
2
pad of 2 oz
DD
DD
= 30V, V
= 30V, V
(Note 2)
GS
GS
θCA
= 10V (Q2).
= 10V (Q1).
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
F
F
is determined by the user' s board design.
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 7 A, d
= -5 A, d
= 15 V, I
= 10V, R
= -15 V, I
= -10V, R
= 15 V, I
= -15 V, I
= 0 V, I
= 0 V, I
Test Conditions
b) 125°/W when
iF
iF
S
S
/d
/d
D
D
mounted on a .02 in
pad of 2 oz copper
GEN
= 1.3 A
= -1.3 A
D
D
t
GEN
t
= 1 A,
= 7 A, V
= 100 A/µs
= 100 A/µs
= -5 A,V
= -1 A,
= 6 Ω
= 6 Ω
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
= -10 V
2
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
c) 135°/W when mounted on a
minimum pad.
-0.88
Typ Max Units
10.7
0.75
9.6
1.7
2.2
2.1
1.7
13
23
14
19
19
8
7
5
3
9
9
6
-1.3
-1.2
1.3
1.2
26
13
16
14
10
24
37
25
17
FDS8958A Rev F1 (W)
6
nC
nC
nC
nS
nC
ns
ns
ns
ns
A
V