auirgp4062d-e International Rectifier Corp., auirgp4062d-e Datasheet - Page 7

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auirgp4062d-e

Manufacturer Part Number
auirgp4062d-e
Description
Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
V
10000
CC
1000
1000
800
600
400
200
100
10
45
40
35
30
25
20
15
10
= 400V; V
5
0
Fig. 23 - Typ. Capacitance vs. V
Fig. 19 - Typ. Diode I
0
Fig. 21 - Typ. Diode E
0
0
R G = 22Ω
R G = 10Ω
10
V
20
GE
GE
T
= 0V; f = 1MHz
= 15V; I
500
J
20
= 175°C
di F /dt (A/µs)
40
V CE (V)
I F (A)
30
F
= 24A; T
RR
60
RR
1000
vs. di
40
Cies
Cres
R G = 100Ω
Coes
vs. I
R G = 47Ω
80
F
J
50
F
/dt
= 175°C
CE
1500
100
60
AUIRGB/P4062D/P4062D-E
4000
3500
3000
2500
2000
1500
1000
500
16
14
12
10
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
V
8
6
4
8
6
4
2
0
Fig. 22 - V
Fig. 20 - Typ. Diode Q
CC
0
8
0
100Ω
= 400V; V
5 10 15 20 25 30 35 40 45 50 55
V
I
CC
CE
10
Q G , Total Gate Charge (nC)
GE
= 400V; T
= 24A; L = 600µH
47Ω
500
V CES = 300V
V CES = 400V
vs. Short Circuit Time
GE
di F /dt (A/µs)
12
V GE (V)
= 15V; T
48A
22Ω
C
= 25°C
24A
RR
14
12A
1000
J
vs. di
= 175°C
10Ω
16
F
/dt
GE
1500
18
280
240
200
160
120
80
40
7

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