auirlu024n International Rectifier Corp., auirlu024n Datasheet - Page 2

• Manufacturer Part Number: auirlu024n
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics

‚
ƒ
„
…
†
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, L
Uses IRLZ24N data and test conditions.
SD
2
DD
≤ 11A, di/dt ≤ 290A/µs, V
= 25V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
J
= 25°C, L = 790µH, R
S
DD
of D-PAK is measured between lead and center of die contact .
Parameter
™
≤ V
(BR)DSS
, T
G
J
J
≤ 175°C
= 25Ω, I
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
AS
= 11A. (See Figure 12)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
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1.0
8.3
55
0.061
Typ.
Typ.
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480
130
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130
7.1
4.5
7.5
74
20
29
61
60
Max. Units
0.065
0.080
0.110
Max. Units
-100
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250
100
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200
2.0
3.7
8.5
1.3
25
15
90
17
72
V/°C
µA
nA
nC
nH
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 11A
= 11A
= 25°C, I
= 25°C, I
= 2.4Ω, See Fig.10
= 12 Ω, V
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 28V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V,See Fig 6 and 13
= 0V
GS
, I
D
D
S
F
D
D
= 250µA
D
D
GS
GS
GS
= 250µA
= 11A, V
= 11A
= 10A
= 11A
= 10A
= 9.0A
= 0V
= 0V, T
= 5.0V
f
Conditions
Conditions
D
f
f
f
= 1mA
GS
J
h
fh
= 150°C
= 0V
www.irf.com
fh
G
f
G
D
S
S
D