auirfu120z International Rectifier Corp., auirfu120z Datasheet

auirfu120z

Manufacturer Part Number

auirfu120z

Description

Hexfet? Power Mosfet V Br Dss 100v

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRFU120Z.pdf (14 pages)

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Features

Description

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Thermal Resistance

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy(Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE MOSFET

@ 10V

Gate

AUIRFR120Z

D-Pak

HEXFET

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

–––

10 lbf

(BR)DSS

DS(on)

-55 to + 175

Drain

Max.

in (1.1N

0.23

± 20

AUIRFR120Z

AUIRFU120Z

8.7

6.1

max.

typ.

Power MOSFET

AUIRFU120Z

Max.

4.28

110

I-Pak

PD - 96345

Source

150m

190m

100V

8.7A

Units

W/°C

°C/W

°C

Related parts for auirfu120z

auirfu120z Summary of contents

Page 1

... AUIRFR120Z AUIRFU120Z ® HEXFET Power MOSFET V 100V (BR)DSS R typ. 150m DS(on) max. 190m I 8. I-Pak AUIRFU120Z D S Drain Source Max. Units 8.7 6 0.23 W/°C ± See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1 ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited starting T = ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 175°C 10.0 1 25°C ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 400 C oss = Ciss 300 200 100 Coss ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 0.01 0.05 1 0.10 0.1 0.01 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 20 TOP Single Pulse BOTTOM 1% Duty Cycle 5. ...

Page 9

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

10 www.irf.com ...

Page 11

www.irf.com 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 13

... Ordering Information Base part Package Type AUIRFR120Z DPak AUIRFU120Z IPak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR120Z AUIRFR120ZTR AUIRFR120ZTRL AUIRFR120ZTRR AUIRFU120Z 13 ...

Page 14

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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