auirf2903zstrr International Rectifier Corp., auirf2903zstrr Datasheet

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auirf2903zstrr

Manufacturer Part Number
auirf2903zstrr
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
Specifically designed for Automotive applications, this
HEXFET
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
specifications is not implied.
HEXFET
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Features
Description
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
JA
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
(Tested )
C
C
C
C
®
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
Power MOSFET utilizes the latest processing
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
functional operation of the device at these or any other condition beyond those indicated in the
j
Ã
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
AUTOMOTIVE GRADE
(Silicon Limited)
(Silicon Limited)
(Package Limited)
h
i
d
G
Gate
G
D
AUIRF2903ZS
Typ.
–––
–––
–––
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
D
2
Pak
D
S
-55 to + 175
G
HEXFET
D
235
166
160
Max.
1020
1.54
231
± 20
231
820
S
Drain
k
k
k
V
R
I
I
D
D (Silicon Limited)
D (Package Limited)
(BR)DSS
DS(on)
Max.
0.65
®
AUIRF2903ZS
AUIRF2903ZL
62
40
Power MOSFET
D
typ.
max.
AUIRF2903ZL
TO-262
Source
PD - 96380
S
G
235A
1.9m
2.4m
160A
D
Units
Units
30V
W/°C
°C/W
S
mJ
mJ
°C
W
A
V
A
1

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auirf2903zstrr Summary of contents

Page 1

Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this ® HEXFET Power MOSFET utilizes the latest processing techniques to ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification ...

Page 4

TOP 100 BOTTOM 10 4.5V 60μs PULSE WIDTH Tj = 25° 100 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 175°C 10 25°C 1.0 ...

Page 5

0V, C iss = SHORTED C rss = C gd 10000 C oss = 8000 Ciss 6000 4000 Coss 2000 Crss 0 1 ...

Page 6

Limited By Package 200 160 120 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 0. 1.0E-06 1.0E-05 160 TOP BOTTOM 1% Duty Cycle 75A 120 100 Starting Junction Temperature (°C) Fig ...

Page 9

D.U.T + ƒ ‚ -  SD Fig 17. www.irf.com Driver Gate Drive D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent Power MOSFETs Fig 18a. Switching Time Test Circuit ...

Page 10

www.irf.com ...

Page 11

TO-262 Package Outline ( TO-262 Part Marking Information www.irf.com Dimensions are shown in millimeters (inches)) 11 ...

Page 12

D Pak Tape & Reel Infomation TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 13

... Ordering Information Base part Package Type AUIRF2903ZL TO-262 AUIRF2903ZS D2Pak www.irf.com Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF2903ZL AUIRF2903ZS AUIRF2903ZSTRL AUIRF2903ZSTRR 13 ...

Page 14

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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