auirfz44nl International Rectifier Corp., auirfz44nl Datasheet - Page 2

• Manufacturer Part Number: auirfz44nl
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

V
ΔV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on

‚
ƒ
„
…
†
Notes:
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
2
(BR)DSS
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
I
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to T
SD
≤ 25A di/d ≤ 230A/μs, V
/ΔT
J
J
= 25°C, L = 0.48mH, R
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
DD
Parameter
™
≤ V
G
(BR)DSS
= 25Ω, I
J
= 175°C .
, T
AS
J
J
≤ 175°C
= 25°C (unless otherwise specified)
= 25A. (See Figure 12)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
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–––
–––
–––
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–––
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–––
2.0
55
19
0.058
Typ.
1470
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
360
–––
–––
–––
170
4.5
7.5
12
60
44
45
88
63
Max. Units
Max. Units
17.5
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
260
4.0
1.3
25
63
14
23
49
95
V/°C
mΩ
nC
nH
nC
μA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 12Ω
= V
= 25V, I
=55V, V
= 44V, V
= 44V
= 28V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V,See Fig 6 and 13
= 10V, See Fig.10
= 0V
GS
, I
D
D
S
F
D
D
GS
= 250μA
GS
= 250μA
= 25A, V
= 25A
= 25A
= 25A
= 0V
= 0V, T
f
Conditions
Conditions
f
D
f
= 1mA
GS
J
= 150°C
f
= 0V
G
www.irf.com
G
f
D
S
S
D