auirf7675m2 International Rectifier Corp., auirf7675m2 Datasheet

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auirf7675m2

Manufacturer Part Number
auirf7675m2
Description
Directfetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
HEXFET
Applicable DirectFET Outline and Substrate Outline 
V
V
I
I
I
I
I
P
P
E
E
I
E
T
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
D
DM
AR
P
J
STG
DS
GS
D
D
AS
AS
AR
θJA
θJA
θJA
θJ-Can
θJ-PCB
@ T
@ T
@ T
@ T
@T
@T
(tested)
SB
C
C
C
A
C
A
®
= 25°C
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
SC
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
l
e
Ù
e
j
k
l
Parameter
Parameter
GS
GS
GS
GS
AUTOMOTIVE GRADE
Ω
@ 10V
@ 10V
@ 10V
@ 10V (Package Limited)
M2
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
M4
g
d
e
D
V
R
R
Q
DirectFET™ Power MOSFET ‚
Typ.
AUIRF7675M2TR1
G
12.5
–––
–––
1.4
L4
See Fig.18a, 18b, 15, 16
20
(BR)DSS
DS(on)
G (typical)
g (typical)
AUIRF7675M2TR
M2
S
S
-55 to + 175
Max.
150
± 20
170
270
4.4
2.7
0.3
typ.
18
13
90
72
45
59
max.
L6
D
Max.
–––
–––
–––
3.3
60
DirectFET™ ISOMETRIC
L8
47m
56m
21nC
150V
1.2
Units
Units
°C/W
W/°C
mJ
mJ
°C
W
8/16/10
V
A
A
1

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auirf7675m2 Summary of contents

Page 1

... SC Description The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat- ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This product has passed an Automotive qualification. IR’s Industrial and Consumer qualification level is granted by ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.5V 10 6.0V 5.5V BOTTOM 5.0V 1 5.0V ≤ 60μs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 140 120 100 80 ...

Page 5

100μ 250μ 1.0mA 1.0A 2.5 1.5 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100 100μsec 10 1msec 25°C 10msec Tj = 175°C Single Pulse DC 0.1 0 100 Drain-toSource Voltage (V) Fig 13. Maximum Safe ...

Page 7

TOP Single Pulse BOTTOM 1% Duty Cycle 11A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy Vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE D D www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com CODE "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date ...

Page 10

... Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7675M2TR). For 1000 parts on 7" reel, order AUIRF7675M2TR1 CODE NOTE: CONTROLLING DIMENSIONS IN MM  Click on this section to link to the appropriate technical paper. ...

Page 11

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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