ssm3055 SeCoS Halbleitertechnologie GmbH, ssm3055 Datasheet

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ssm3055

Manufacturer Part Number
ssm3055
Description
N-channel Enhancement Mode Power Mos.fet
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching
Description
The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.
The SSM3055 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Features
Thermal Data
Absolute Maximum Ratings
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Thermal Resistance Junction-ambient
Elektronische Bauelemente
1
Parameter
Parameter
GS
GS
@10V
@10V
RoHS Compliant Product
P
I
I
D
D
D
@T
@T
Tj, Tstg
N-Channel Enhancement Mode Power Mos.FET
@T
Symbol
Symbol
Rthj-a
V
V
I
DM
A
A
GS
DS
A
=25
=75
=25
4A, 30V,R
G
SSM3055
G
Ratings
-55~+150
Ratings
Any changing of specification will not be informed individual
±20
SOT-223
0.02
3.2
2.7
30
20
4
45
D
D
DS(ON)
S
D
S
80m
Ω
W / C
Unit
Unit
C
V
V
W
A
A
A
/W
C
Page 1 of 4

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ssm3055 Summary of contents

Page 1

... Elektronische Bauelemente Description The SSM3055 Provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 Package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters. Features ...

Page 2

... (Off 3.2 _ 260 Ciss _ Coss 144 _ Crss 13 Symbol Min. Typ ≦ SSM3055 4A, 30V,R 80m DS(ON) Max. Unit Test Condition =0V Reference 3 GS, _ 100 ± 20V ± ...

Page 3

... Elektronische Bauelemente Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SSM3055 4A, 30V,R 80m DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. ...

Page 4

... Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Circuit http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SSM3055 4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Ω ...

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