ssm3j313t TOSHIBA Semiconductor CORPORATION, ssm3j313t Datasheet
ssm3j313t
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ssm3j313t Summary of contents
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... Symbol Rating Unit V -20 V DSS ± GSS (Note 1) 700 mW D °C T 150 ch −55 to 150 °C T stg SSM3J313T Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 １ ２ ３ 1: Gate 2: Source TSM 3: Drain JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ.) 2007-12-11 ...
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... − - -0 -2 off =1 DSF SSM3J313T Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ (Note2) 1.3 2.6 ⎯ (Note2) 202 268 ⎯ (Note2) ...
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... Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3J313T). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate–source voltage V 1000 Common Source Ta = 25°C 800 600 400 -1 100 °C 200 VGS = -4.0 V − 25 ° -0.5 (V) -1.0 -0.5 0 −50 150 4 SSM3J313T I – − 25 °C 25 °C -1.0 -2.0 -3.0 ( – (ON) D -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 Drain current I ( – Common Source ...
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... G 0.1 0.01 0.001 -10 0 0.2 Drain–source voltage V 1000 t off 100 C iss rss -100 -0.01 ( SSM3J313T I – =100 °C 25 °C −25 °C 0.4 0.6 0.8 1.0 1.2 ( – Common Source - -2 ° 4.7Ω ...
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... Pulse Width t (s) w 1000 800 a 600 b 400 200 ) 0 100 1000 -40 -20 Ambient temperature Ta (°C) 6 SSM3J313T P – Mounted on FR4 Board (25.4mm × 25.4mm × 1. Pad : 645 Mounted on FR4 Board (25.4mm × 25.4mm × 1. Pad: 0.8 mm × ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM3J313T 20070701-EN 2007-12-11 ...