ssm3k15fv TOSHIBA Semiconductor CORPORATION, ssm3k15fv Datasheet - Page 2

• Manufacturer Part Number: ssm3k15fv
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
Please take this into consideration when using the device.
V
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
5 V
Characteristics
th.
0
V
D.U. < = 1%
Input: t
(Z
Common Source
Ta = 25°C
DD
out
10 μs
Turn-on time
Turn-off time
= 5 V
= 50 Ω)
r
, t
f
< 5 ns
Input
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
Output
R
rss
iss
th
fs
V
L
DD
GS (on)
⏐
GS (off)
V
I
V
V
V
I
I
V
V
V
V
V
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
requires a higher voltage than V
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
< V
= 30 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ±16 V, V
= 5 V, I
= 0~5 V
2
OUT
IN
th
< V
D
D
D
Test Condition
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
GS
GS (on)
DS
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4 V
= 2.5 V
= 0
= 0
= 0
)
V
DS (ON)
V
5 V
DD
0 V
th
and V
Min
t
0.8
30
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
on
10%
GS (off)
t
r
10%
90%
Typ.
180
2.2
4.0
7.8
3.6
8.8
50
⎯
⎯
⎯
⎯
⎯
SSM3K15FV
requires a lower
t
D =
2007-11-01
90%
off
Max
1.5
4.0
7.0
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
100 μA for
t
f
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V