ssm6e01tu TOSHIBA Semiconductor CORPORATION, ssm6e01tu Datasheet - Page 6

• Manufacturer Part Number: ssm6e01tu
• Description: Toshiba Multi-chip Device Silicon P-channel Mos Type U-mos Ii N-channel Mos Type Planer
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (Nch MOSFET)
0.01
100
100
300
100
0.1
80
60
40
20
10
50
30
10
0
1
5
0
0
1
Common source
V DS = 3 V
Ta = 25°C
G
2.5
Common source
V GS = 0
Ta = 25°C
−0.2
Drain-Source voltage V
Drain-Source voltage V
2
3
D
S
2.0
Drain current I
−0.4
1.9
I DR
5
I
4
Y
I
DR
D
1.8
fs
– V
−0.6
10
– V
 – I
1.7
DS
DS
D
D
6
−0.8
(mA)
DS
DS
Common source
Ta = 25°C
30
(V)
(V)
V GS = 1.4 V
8
−1.0
1.6
50
−1.2
100
10
6
1000
0.01
100
100
100
0.1
80
60
40
20
10
50
30
10
0
1
5
3
1
0.1
0
0
Common source
V DS = 3 V
0.5
4.0
0.3
0.2
Drain-Source voltage V
Drain-Source voltage V
Gate-Source voltage V
Ta = 100°C
25°C
2.5
1
0.4
I
1
I
D
C – V
D
– V
−25°C
– V
1.5
2.2
DS
DS
GS
0.6
3
(low-voltage area)
2
GS
DS
DS
Common source
V GS = 0
f = 1 MHz
Ta = 25°C
Common source
Ta = 25°C
SSM6E01TU
(V)
(V)
(V)
V GS = 1.4 V
0.8
10
2.0
2.5
C oss
C iss
C rss
2003-07-08
1.8
1.6
1.0
30
3