ssm6l12tu TOSHIBA Semiconductor CORPORATION, ssm6l12tu Datasheet - Page 6

• Manufacturer Part Number: ssm6l12tu
• Description: Toshiba Field Effect Transistor Silicon P/n Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2(Pch MOS FET)
500
400
300
200
100
500
400
300
200
100
-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
0
-60 -40 -20 0
0
0
0
Common Source
ID=-250mA
-200
VGS=-4V
Ambient temperature Ta (°C)
-5.0
-0.2
-2.5V
-400
Drain-Source voltage VDS (V)
RDS(ON) - ID
Drain current ID (mA)
20 40 60 80 100 120 140 160
RDS(ON) - Ta
-600
-4.0
ID - VDS
-0.4
-3.0
-800
Common Source
Ta=25°C
Common Source
Ta=25°C
-1000
-0.6
-1200
VGS=-1.6
-0.8
VGS=-4V
-1400
-2.0
-2.5V
-1.8
-1600
-1
6
-
10000
-
-
-
1000
-
-
0.01
100
-
0.1
500
400
300
200
100
10
-0.8
-0.6
-0.4
-0.2
-
1
0
-1
0
0
-60 -40 -20 0
0
-1
Common Source
ID=-0.1mA
VDS=-3V
Ta=100°C
Gate-Source voltage VGS (V)
-2
Gate-Source voltage VGS (V)
-3
Ambient temperature Ta (°C)
-1
-25°C
RDS(ON) - VGS
20 40 60 80 100 120 140 160
-4
ID - VGS
Vth - Ta
25°
-5
Common Source
VDS=-3V
Common Source
ID=-250mA
-6
SSM6L12TU
-2
-7
2007-11-01
Ta=100°C
-8
-25°C
25°C
-9
-10
-3