ssm6n7002fu TOSHIBA Semiconductor CORPORATION, ssm6n7002fu Datasheet - Page 2

• Manufacturer Part Number: ssm6n7002fu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
than V
V
Please take this into consideration for using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as voltage between gate and source when low operating current value is I
th
. (Relationship can be established as follows: V
10V
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
0
DD
IN
out
Characteristics
: t
10 μs
= 30 V
r
= 50 Ω)
, t
f
<
Turn-on delay time
Turn-off delay time
2 ns
IN
(Ta = 25°C)
R
V
OUT
GS (on)
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
td
td
I
I
C
C
C
GSS
DSS
V
oss
(on)
(off)
iss
rss
th
fs
requires higher voltage than V
⎪
GS (off)
(Q1, Q2 Common)
V
I
V
V
V
I
I
I
V
V
V
(b) V
(c) V
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 500 mA, V
= 100 mA, V
= 100 mA, V
2
= ± 20 V, V
= 60 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= 30V, I
= 0 ~ 10V
OUT
IN
<
V
Test Condition
th
V
D
D
D
DS (ON)
<
GS
GS
GS
= 200 mA,
GS
GS
GS
V
= 0.25 mA
= 200 mA
10 V
DS
V
DD
0 V
= 0
= 0, f = 1 MHz
GS (on)
= 0
= 10 V
= 5 V
= 4.5 V
= 0
td
(on)
)
th
and V
10%
t
GS (off)
r
10%
90%
Min
170
1.0
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
requires lower voltage
SSM6N7002FU
90%
D
Typ
2.0
2.1
2.2
1.4
5.8
2.4
17
26
⎯
⎯
⎯
⎯
⎯
=250 μA for this
td
(off)
t
f
2007-11-01
± 10
Max
2.5
3.0
3.2
3.3
4.0
⎯
40
⎯
⎯
⎯
⎯
1
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V