si7495dp-t1 Vishay, si7495dp-t1 Datasheet
si7495dp-t1
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si7495dp-t1 Summary of contents
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... 2 0.011 @ 1 PowerPAK SO-8 6. Bottom View Ordering Information: Si7495DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction Maximum Power Dissipation ...
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... Si7495DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... S-31417—Rev. A, 07-Jul-03 New Product 11000 8800 6600 4400 4.5 V 2200 110 0.030 0.024 0.018 = 25_C 0.012 0.006 0.000 0.8 1.0 1.2 Si7495DP Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 1.4 1 ...
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... Si7495DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 0.2 0.1 0.0 - 0 Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Case ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72277 S-31417—Rev. A, 07-Jul-03 New Product - Square Wave Pulse Duration (sec) Si7495DP Vishay Siliconix 1 10 www.vishay.com 5 ...