si7454cdp Vishay, si7454cdp Datasheet

no-image

si7454cdp

Manufacturer Part Number
si7454cdp
Description
N-channel 100 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7454cdp-T1-GE3
Manufacturer:
Maxim
Quantity:
48
Part Number:
si7454cdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS
100
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0305 at V
6
0.033 at V
0.043 at V
D
PowerPAK
5
Bottom View
R
D
DS(on)
GS
GS
1
GS
®
S
()
SO-8
J
= 7.5 V
= 4.5 V
= 10 V
= 150 °C)
2
b, f
S
3
S
N-Channel 100 V (D-S) MOSFET
5.15 mm
4
G
I
D
18.5
22
21
(A)
This document is subject to change without notice.
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
9.5 nC
g
T
T
T
T
T
T
L =0.1 mH
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t  10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
3.3
24
- 55 to 150
8.1
6.5
3.7
4.1
2.6
Limit
± 20
17.6
11.2
29.7
100
260
22
40
22
15
19
b, c
b, c
b, c
b, c
b, c
Maximum
4.2
30
Vishay Siliconix
www.vishay.com/doc?91000
Si7454CDP
G
N-Channel MOSFET
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for si7454cdp

si7454cdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7454CDP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V 1.1 0.8 0 10.8 13.5 On-Resistance vs. Junction Temperature This document is subject to change without notice. Si7454CDP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7454CDP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 ° °C J 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0 250 μ 0 Temperature (°C) J Threshold Voltage 100 0.1 0.01 www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0 ...

Page 5

... Case Temperature (°C) C Current Derating* 2.20 1.76 1.32 0.88 0.44 0.00 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper This document is subject to change without notice. Si7454CDP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com www ...

Page 6

... Si7454CDP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords