bsc060n10ns3g Infineon Technologies Corporation, bsc060n10ns3g Datasheet - Page 4

• Manufacturer Part Number: bsc060n10ns3g
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
140
120
100
10
10
10
10
10
80
60
40
20
0
DS
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
40
10
0
V
T
C
DS
DC
10
80
[°C]
1
[V]
1 ms
100 µs
10 µs
1 µs
120
10
2
100 ns
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
100
=f(t
10
10
10
10
90
80
70
60
50
40
30
20
10
C
0
-1
-2
1
0
); V
10
p
0
)
0.05
-5
0.02
0.5
0.1
0.2
single pulse
GS
≥10 V
p
10
/T
-4
40
0.01
10
-3
T
t
C
p
80
[°C]
[s]
BSC060N10NS3 G
10
-2
120
10
-1
2008-10-20
160
10
0