bsc079n03s Infineon Technologies Corporation, bsc079n03s Datasheet - Page 7

• Manufacturer Part Number: bsc079n03s
• Description: Optimos 2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.01
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
34
32
30
28
26
24
22
20
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25
-20
D
=1 mA
20
10
t
125 °C
T
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=20 A pulsed
g s
5
10
Q
Q
gate
g
Q
sw
[nC]
Q
15
g d
BSC079N03S G
6 V
20
2004-12-15
24 V
Q
15 V
gate
25