si7852adp Vishay, si7852adp Datasheet - Page 4

• Manufacturer Part Number: si7852adp
• Description: N-channel 80-v D-s Mosfet
• Manufacturer: Vishay

Si7852ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.5
- 0.8
- 1.1
- 1.4
0.01
100
0.7
0.4
0.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
0.4
J
J
= 150 °C
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.01
100
0.8
0.1
10
0.01
1
T
J
100
= 25 °C
* V
Safe Operating Area, Junction-to-Ambient
Limited by r
I
1.0
GS
D
125
= 5 mA
> minimum V
V
Single Pulse
New Product
0.1
T
DS
A
150
DS(on)
1.2
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which r
1
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
10
200
160
120
80
40
is specified
0
0
4.0
0 .
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
100
5.2
1 ms
10 ms
100 ms
1 s
10 s
V
DC
0.01
GS
- Gate-to-Source Voltage (V)
6.4
Time (s)
0.1
S-72676-Rev. A, 24-Dec-07
Document Number: 73988
7.6
I
D
T
T
1
A
= 10 A
A
8.8
= 125 °C
= 25 °C
10.0
1
0