zxmn10a08gta Zetex Semiconductors plc., zxmn10a08gta Datasheet - Page 4

• Manufacturer Part Number: zxmn10a08gta
• Description: 100v Sot223 N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*) (‡)
Symbol
V
I
I
V
R
g
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
C
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
100
2.0
4
Typ.
28.2
14.2
0.87
405
3.4
2.2
3.2
4.2
7.7
1.8
2.1
27
32
5
8
2%.
Max.
0.25
0.30
0.95
100
0.5
Unit
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
ZXMN10A08G
A
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 1.2A
= 1.2A
=25°C, I
=25°C, I
≅6.0 , V
= 100V, V
= 15V, I
= 50V, V
= 50V, V
= 50V, V
=±20V, V
= 10V, I
= 6V, I
= 30V, I
=0V
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S
S
D
= 3.2A,
= 1.2A,
D
D
D
GS
= 2.6A
GS
GS
GS
= 3.2A
= 3.2A
= 1.2A
DS
GS
DS
GS
= 10V
=0V
= 5V
= 10V
=0V
=V
=0V
=0V
GS