zxmn2amc Diodes, Inc., zxmn2amc Datasheet - Page 4

• Manufacturer Part Number: zxmn2amc
• Description: 20v Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
Notes:
ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
g
Q
Q
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
4 of 8
Min
0.7
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.085
0.140
Typ
299
6.2
0.9
5.7
0.8
3.1
0.7
1.0
2.3
2.6
1.6
1.3
23
60
33
-
-
-
-
0.120
0.300
±100
Max
0.95
3.0
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diodes Incorporated
A Product Line of
Unit
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
V
I
V
V
I
V
V
V
I
I
V
f = 1.0MHz
V
V
V
V
D
D
S
S
DS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 250μA, V
= 250μA, V
= 3.2A, V
= 4A, di/dt = 100A/µs
= 20V, V
= ±12V, V
= 4.5V, I
= 2.5V, I
= 10V, I
= 15V, V
= 2.5V
= 4.5V
= 10V, I
= 5V, R
Test Condition
ZXMN2AMC
GS
G
D
D
D
D
GS
GS
GS
DS
= 4A
= 6Ω
= 4A
DS
= 4A
= 1.5A
= 0V
= 0V
= 0V,
© Diodes Incorporated
= 0V
= V
V
I
December 2010
= 0V
D
DS
= 4A
GS
= 10V