si7159dp Vishay, si7159dp Datasheet - Page 4

• Manufacturer Part Number: si7159dp
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7159DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.6
0.3
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
0.8
T
0.01
100
J
0.1
10
= 25 °C
100
1
0.01
Limited by R
I
1.0
* V
D
Single Pulse
= 5 mA
T
125
GS
A
= 25 °C
> minimum V
V
New Product
1.2
150
DS
0.1
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.030
0.024
0.018
0.012
0.006
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= - 15 A
10 ms
100 ms
10 s
1 ms
1 s
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-82122-Rev. A, 08-Sep-08
Document Number: 68872
6
1
T
T
J
J
= 125 °C
= 25 °C
8
1
10
0