2sc4115e-wbfbp-03a Jiangsu Changjiang Electronics Technology Co., Ltd., 2sc4115e-wbfbp-03a Datasheet
2sc4115e-wbfbp-03a
Manufacturer Part Number
2sc4115e-wbfbp-03a
Description
Wbfbp-03a Plastic-encapsulate Transistors
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.2SC4115E-WBFBP-03A.pdf
(3 pages)
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Low V
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:CFQ, CFR, CFS
MAXIMUM RATINGS T
V
V
V
I
P
T
T
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
Collector output capacitance
C
Symbol
CLASSIFICATION OF h
J
stg
CBO
CEO
EBO
D
Rank
Range
CFQ
B E
2SC4115E
C
CE
(sat).V
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
CE
(sat) = 0.2V (Typ.)(I
Parameter
A
=25
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
FE
WBFBP-03A Plastic-Encapsulate Transistors
TRANSISTOR
℃
unless otherwise noted
120-270
Q
C
/I
B
= 2A/0.1A)
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
I
I
h
CBO
CEsat
EBO
f
FE
obo
T
-55-150
Value
150
150
40
20
6
3
I
I
I
V
V
V
I
V
f=100MHz
V
C
C
E
C
CB
EB
CE
CE
CB
=50µA, I
= 50µA , I
= 1mA , I
= 2A,
Test
=30V , I
= 5V , I
=2 V, I
=2V, I
=10V,I
Units
mW
E
℃
℃
conditions
C
V
V
V
A
I
B
C
=0,f=1MHz
=0
E
C
180-390
=0.1A
=0.5 A
B
=0
C
= 0.1A
E
=0
=0
=0
R
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
MIN
120
40
20
6
TYP
290
25
BACK
TOP
270-560
MAX
S
560
0.1
0.1
0.5
B
E
C
C
E
B
UNIT
MHz
µA
µA
pF
V
V
V
V
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2sc4115e-wbfbp-03a Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low V (sat).V (sat) = 0.2V (Typ.)( APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C CFQ B E ℃ ...
Page 2
... Typical Characteristics 2SC4115E ...
Page 3
illim ...