2sc4576 Panasonic Corporation of North America, 2sc4576 Datasheet

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2sc4576

Manufacturer Part Number
2sc4576
Description
Silicon Npn Triple Diffusion Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet

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Part Number:
2SC4576
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Power Transistors
2SC4576
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Features
High-speed switching
High collector to base voltage V
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
T
Ta=25 C
C
=25 C
Symbol
V
V
V
V
I
I
P
T
T
CP
C
C
j
stg
CBO
CER
CEO
EBO
I
I
V
V
V
h
V
V
f
t
t
t
on
stg
f
CBO
EBO
T
FE
(T
Symbol
CBO
CEO
CER
EBO
CE(sat)
BE(sat)
C
(T
=25˚C)
–55 to +150
C
=25˚C)
Ratings
1400
1400
700
150
1.0
0.3
1.4
20
5
V
V
I
I
I
V
I
I
V
I
I
V
C
C
E
C
C
C
B1
CB
EB
CE
CE
CC
= 1mA, I
= 1mA, R
= 1mA, I
= 60mA, I
= 60mA, I
= 150mA,
= 15mA, I
= 4V, I
= 5V, I
= 10V, I
= 1100V, I
= 250V
FE
C
C
C
B
Unit
Conditions
BE
C
˚C
˚C
W
B
B
V
V
V
V
A
A
= 0
= 0
= 30mA
= 0
B2
= 30mA, f = 1MHz
= 6mA
= 6mA
E
= 100
= –30mA,
= 0
5.08 0.5
1400
min
700
10
5
1
10.5 0.5
9.5 0.2
8.0 0.2
2
3
2.54 0.3
0.8 0.1
typ
12
3.7 0.2
TO–220 Package(b)
max
10
10
40
2
2
2
3
1
4.5 0.2
1:Base
2:Collector
3:Emitter
0.6 0.1
Unit: mm
1.4 0.1
2.5 0.2
MHz
Unit
V
V
V
V
V
A
A
s
s
s
1

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2sc4576 Summary of contents

Page 1

... Power Transistors 2SC4576 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Features High-speed switching High collector to base voltage V Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio h Absolute Maximum Ratings Parameter Symbol Collector to base voltage ...

Page 2

... T =100˚C C 0.3 1mA 25˚C 0.1 –25˚C 0.03 0. 0.001 0.003 0.01 0. Collector current — 1000 V =5V CE 300 100 0.3 1 0.001 0.003 0.01 0. Collector current I t=1ms 300 1000 ( 2SC4576 = 0.1 0 =10V CE f=1MHz T =25˚C C 0.1 0 ...

Page 3

... Power Transistors R 10000 Note: R was measured at Ta=25˚C and under natural convection. th (1) Without heat sink (2) With a 100 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 100 2mm Al heat sink (1) ( 2SC4576 4 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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