2sc4229 HITACHI, 2sc4229 Datasheet - Page 2

• Manufacturer Part Number: 2sc4229
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC4229
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
AGC voltage
Note: Marking is “UI–”.
2
Symbol
V
I
I
I
V
h
Cob
f
PG
NF
V
CBO
CEO
EBO
T
FE
(BR)CBO
CE(sat)
AGC
Min
30
—
—
—
—
50
—
0.7
10
—
1.8
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
—
—
—
0.6
1.0
15
3.0
—
CBO
CEO
EBO
C
Max
—
0.3
10
1.0
5.0
180
0.8
—
—
4.5
2.7
Unit
V
µA
µA
µA
V
pF
GHz
dB
dB
V
Ratings
30
25
3
20
150
150
–55 to +150
Test conditions
I
V
V
V
I
V
V
V
V
V
V
GR = 30dB
f = 900 MHz
f = 900 MHz
f = 900 MHz P
C
C
CB
CE
EB
CE
CB
CE
CC
CC
CC
= 10 µA, I
= 10 mA, I
= 15 V, I
= 25 V, R
= 3 V, I
= 5 V, I
= 10 V, I
= 5 V, I
= 4 V, I
= 4 V, I
= 4 V, I
C
C
C
C
C
C
Unit
V
V
V
mA
mW
°C
°C
E
E
E
= 0
= 2 mA
= 2 mA
= 2 mA,
= 2 mA,
= 2 mA,
B
BE
= 0
= 0
= 0, f = 1MHz
= 1 mA
in
=
= –50dBm,