hn7g02fu TOSHIBA Semiconductor CORPORATION, hn7g02fu Datasheet - Page 4

• Manufacturer Part Number: hn7g02fu
• Description: Toshiba Multi Chip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (MOS-FET)
(a) Switching time test circuit
2.5 V
0.05
0.03
0.01
0.5
0.3
0.1
60
50
40
30
20
10
50
30
10
0
5
3
1
0
0
0
10 μS
2.5
−0.2
V
IN
2
−0.4
Drain-source voltage V
Drain-source voltage V
2.2
2.0
1.8
IN
−0.6
4
I
−0.8
I
DR
1.6
D
– V
– V
6
−1.0
DS
I
D
DS
V GS = 1.4 V
G
V
−1.2
DD
Common source
V GS = 0
Ta = 25°C
8
DS
DS
Common source
Ta = 25°C
1.2
OUT
−1.4
(V)
(V)
D
S
10
−1.6
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
I DR
DD
IN
out
: t
−1.8
12
= 3 V
r
= 50 Ω)
, t
f
< 5 ns
4
(b) V
(c) V
0.05
0.03
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.5
0.3
0.1
50
30
10
V
V
0
5
3
1
OUT
IN
0
0
GS
DS
Ta = 100°C
2.5
1.2
0.1
1
Drain-source voltage V
Gate-source voltage V
V
I
25
DS (ON)
D
−25
0.2
– V
2.5 V
V
2
DD
DS
I
0
D
1.1
(低電圧領域)
– V
0.3
GS
3
t
on
10%
0.4
t
90%
r
GS
DS
Common source
V DS = 3 V
V GS = 1.0 V
Common source
Ta = 25°C
4
(V)
(V)
t
1.05
0.95
HN7G02FU
0.5
90%
off
0.9
0.8
2007-11-01
5
t
f
0.6
10%