2sc5108 TOSHIBA Semiconductor CORPORATION, 2sc5108 Datasheet
2sc5108
Manufacturer Part Number
2sc5108
Description
Npn Epitaxial Planar Type For Vco Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SC5108.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC5108
Manufacturer:
toshiba
Quantity:
30 000
Company:
Part Number:
2sc5108FT
Manufacturer:
toshiba
Quantity:
30 000
For VCO Application
Absolute Maximum Ratings
Electrical Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
Note 1: h
Note 2: C
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Characteristics
Characteristics
FE
re
is measured by 3 terminal method with capacitance bridge.
classification O: 80~160, Y: 120~240
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
⎪S
Symbol
Symbol
C
V
V
V
I
I
T
c
CBO
EBO
h
C
C
P
CBO
CEO
EBO
21e
I
I
(Note 1)
･
T
f
stg
FE
B
C
T
ob
re
rbb’
C
2SC5108
j
⎪
2
V
V
V
V
V
V
V
CB
EB
CE
CE
CE
CB
CB
−55~125
Rating
= 10 V, I
= 1 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
100
125
20
10
15
30
3
1
C
C
C
C
E
C
Test Condition
E
= 0
= 0, f = 1 MHz
= 5 mA
= 5 mA
= 5 mA, f = 1 GHz
= 3 mA, f = 30 MHz
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
(Note 2)
Weight: 2.4 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
80
⎯
⎯
⎯
⎯
⎯
4
7
Typ.
0.7
0.5
5.5
11
⎯
⎯
⎯
6
2-2H1A
2007-11-01
2SC5108
―
―
Max
240
0.1
0.1
0.9
10
⎯
⎯
⎯
Unit: mm
GHz
Unit
μA
μA
dB
pF
pF
ps
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2sc5108 Summary of contents
Page 1
... GHz V 21e MHz mA MHz C rbb’ ･ 1 2SC5108 JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Min Typ. Max ⎯ ⎯ 0.1 ⎯ ⎯ 0.1 ⎯ 80 240 ⎯ ...
Page 2
... Marking 2 2SC5108 2007-11-01 ...
Page 3
... 3 2SC5108 2007-11-01 ...
Page 4
... S22 Ang. Mag. Ang. −29.5 63.1 0.765 −37.8 56.5 0.553 −39.1 56.5 0.452 −39.0 57.6 0.402 −38.9 58.8 0.374 −39.4 59.6 0.359 −40.7 59.9 0.348 −43.2 59.2 0.339 − ...
Page 5
... 5 2SC5108 2007-11-01 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SC5108 20070701-EN GENERAL 2007-11-01 ...