2sc5008-t1 Renesas Electronics Corporation., 2sc5008-t1 Datasheet

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2sc5008-t1

Manufacturer Part Number
2sc5008-t1
Description
Npn Silicon Epitaxial Transistor 3 Pins Ultra Super Mini Mold
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. P10387EJ2V0DS00 (2nd edition)
(Previous No. TD-2433)
Date Published July 1995 P
Printed in Japan
DESCRIPTION
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface, process (NEST2 process) which is an NEC
proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High f
• Low C
• Low NF: 1.9 dB TYP. (@ V
• High |S
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC5008
2SC5008-T1
sample. Unit sample quantity shall be 50 pcs.
The 2SC5008 is an NPN epitaxial silicon transistor designed for use
PART
NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
T
re
: 8.0 GHz TYP. (@ V
21e
: 0.3 pF TYP. (@ V
|
2
: 7.5 dB TYP. (@ V
50 pcs./Unit
3 kpcs./Reel
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
CE
CE
CE
= 3 V, I
= 3 V, I
= 3 V, I
CE
= 3 V, I
V
V
V
T
P
CBO
CEO
EBO
I
T
C
stg
PACKING STYLE
T
j
E
C
DATA SHEET
C
A
= 0, f = 1 MHz)
= 5 mA, f = 2 GHz)
= 5 mA, f = 2 GHz)
= 25 ˚C)
C
= 5 mA, f = 2 GHz)
–65 to + 150
125 mW
150
1.5
20
10
35
mA
˚ C
˚ C
V
V
V
SILICON TRANSISTOR
PACKAGE DIMENSIONS
1. Emitter
2. Base
3. Collector
2
1
in millimeters
2SC5008
1.6 ± 0.1
0.8 ± 0.1
©
3
1993

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2sc5008-t1 Summary of contents

Page 1

... Ultra Super Mini Mold Package. ORDERING INFORMATION PART QUANTITY NUMBER 2SC5008 50 pcs./Unit 2SC5008-T1 3 kpcs./Reel * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

... ˚C) A MIN. TYP. MAX. UNIT 1 160 5.5 8.0 GHz 0.3 0 5.5 7.5 dB 1.9 3 2SC5008 TEST CONDITIONS MHz mA GHz ...

Page 3

... 0 INSERTION POWER GAIN vs. COLLECTOR CURRENT 0 2SC5008 0.5 1.0 – Base to Emitter Voltage – – Collector Current – – Collector Current – mA ...

Page 4

... FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 1.0 0.5 0.2 0 – Collector to Base Voltage – MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 50 2SC5008 MAG | 21e 0.5 1.0 2.0 5.0 f – Frequency – GHz ...

Page 5

... S22 MAG ANG .922 –13.6 .804 –22.2 .699 –25.8 .632 –27.3 .583 –28.1 .550 –28.1 .525 –28.3 .506 –28.7 .490 – ...

Page 6

... S22 MAG ANG .964 –9.7 .897 –17.8 .814 –23.3 .748 –27.0 .687 –29.5 .643 –31.2 .604 –32.3 .574 –33.3 .547 – ...

Page 7

... S22 MAG ANG .996 –4.0 .987 –8.1 .966 –11.8 .953 –15.4 .929 –18.7 .909 –22.0 .883 –24.9 .859 –27.7 .830 – ...

Page 8

... S22 MAG ANG .974 –8.7 .928 –16.9 .859 –23.0 .798 –28.0 .738 –32.0 .689 –35.2 .640 –37.5 .601 –39.4 .565 – ...

Page 9

... [MEMO] 2SC5008 9 ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 2SC5008 M4 94.11 ...

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