2sc5376ct TOSHIBA Semiconductor CORPORATION, 2sc5376ct Datasheet

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2sc5376ct

Manufacturer Part Number
2sc5376ct
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
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Quantity
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Part Number:
2SC5376CT
Manufacturer:
toshiba
Quantity:
30 000
General Purpose Amplifier Applications
Switching and Muting Switch Applications
Absolute Maximum Ratings
Marking
Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mm)
Low saturation voltage: V
Large collector current: I
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
2
1
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
7J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Type Name
3
C
h
FE
@I
CE (sat) (1)
= 400 mA (max)
Rank
C
= 10 mA/I
(Ta = 25°C)
= 15 mV (typ.)
P
2SC5376CT
C
Symbol
V
V
V
(Note1)
T
B
CBO
CEO
EBO
I
I
T
stg
C
B
j
= 0.5 mA
−55 to 150
Rating
400
100
150
15
12
50
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.75 mg (typ.)
JEDEC
JEITA
TOSHIBA
CST3
0.15±0.03
0.6±0.05
0.5±0.03
0.35±0.02
1.BASE
2.EMITTER
3.COLLECTOR
2SC5376CT
2-1J1A
0.05±0.03
2010-04-18
Unit: mm

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2sc5376ct Summary of contents

Page 1

... CBO CEO EBO I 400 (Note1) 100 150 °C j −55 to 150 T °C stg 1 2SC5376CT Unit: mm 0.6±0.05 0.5±0.03 3 1 2 0.05±0.03 0.35±0.02 0.15±0.03 1.BASE 2.EMITTER CST3 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) 2010-04-18 ...

Page 2

... mA rms 300 Ω μs t stg Duty Cycle ≤ 2% IB1 = −IB2 = 2SC5376CT Min Typ. Max ⎯ ⎯ 0.1 ⎯ ⎯ 0.1 ⎯ 300 1000 ⎯ ⎯ 101 250 ⎯ 0.88 1.2 ⎯ 80 140 ⎯ ...

Page 3

... EMITTER 25° 0.5 0.3 0.1 300 1000 0.1 0.3 (mA) COLLECTOR CURRENT 100 1.6 0.1 0.3 (V) COLLECTOR-BASE VOLTAGE 3 2SC5376CT h – COMMON EMITTER 100°C 25 − 100 300 1000 (mA – (sat 100 300 500 ...

Page 4

... P – 125 100 100 125 AMBIENT TEMPERATURE Ta (°C) 150 175 4 2SC5376CT 2010-04-18 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC5376CT 2010-04-18 ...

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