2sa1011p Sanyo Semiconductor Corporation, 2sa1011p Datasheet

2sa1011p

Manufacturer Part Number

2sa1011p

Description

Pnp / Npn Epitaxial Planar Silicon Transistors

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SA1011P.pdf (4 pages)

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Ordering number : EN8522

2SA1011P / 2SC2344P

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

* : The 2SA1011P/2SC2344P are classified by 300mA h FE as follows :

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Base-to-Emitter Voltage

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Rank

h FE

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60 to 120

( ) : 2SA1011P

100 to 200

V (BR)CBO

V (BR)CEO

V (BR)EBO

V CE (sat)

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

V BE

Tstg

h FE

Cob

I CP

P C

I C

f T

2SA1011P / 2SC2344P

SANYO Semiconductors

Tc=25°C

V CB =(--)120V, I E =0A

V EB =(--)4V, I C =0A

V CE =(--)5V, I C =(- -)300mA

V CE =(--)10V, I C =(--)50mA

V CB =(--)10V, f=1MHz

V CE =(--)5A, I C =(--)10mA

I C =(--)500mA, I B =(--)50mA

I C =(--)1mA, I E =0A

I C =(--)1mA, R BE =∞

I E =(--)1mA, I C =0A

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications

Conditions

DATA SHEET

62707DA TI IM TC-00000697

min

(--)180

(--)160

(--)6

60*

Ratings

(- -0.5)0.3

typ

(30)23

Ratings

100

Continued on next page.

--55 to +150

max

(- -)180

(- -)160

(--)1.5

(--)10

200*

(- -)6

(- -)3

150

No.8522-1/4

Unit

MHz

µA

°C

Related parts for 2sa1011p

2sa1011p Summary of contents

Page 1

... Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage * : The 2SA1011P/2SC2344P are classified by 300mA follows : Rank 120 100 to 200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to " ...

Page 2

... Collector to Emitter Voltage --2.4 --2.0 --1.6 --1.2 --0.8 --0 --0.2 --0.4 --0.6 --0.8 Base to Emitter Voltage 2SA1011P / 2SC2344P Symbol Conditions t on See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. Switching Time Test Circuit PW=20µs 1.3 INPUT 1.0 2SA1011P 0.8 0.6 0.4 0 =0mA ...

Page 3

... Collector Current (sat 1 0 (For PNP minus sign is omitted 0.01 0.1 Collector Current 2SA1011P / 2SC2344P 1000 2SA1011P 100 1 --1.0 0.01 IT02136 =10V ...

Page 4

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. 2SA1011P / 2SC2344P PS No.8522-4/4 ...

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