bd00d0awhfp ROHM Co. Ltd., bd00d0awhfp Datasheet - Page 10

• Manufacturer Part Number: bd00d0awhfp
• Description: 2a Standard Variable Output Ldo Regulator
• Manufacturer: ROHM Co. Ltd.

BD00D0AWHFP
© 2011 ROHM Co., Ltd. All rights reserved.
www.rohm.com
17. Positive voltage surges on VCC pin
18. Negative voltage surges on VCC pin
19. Output protection diode
20. Regarding input pins of the IC
A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on
the VCC pin.
A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the
VCC pin.
Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a
protection diode should be inserted on the output to protect the IC.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes
and/or transistors. For example (refer to the figure below):
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
(Pin A)
N
P
○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode
○When GND > Pin B, the PN junction operates as a parasitic transistor
P+
Resistor
N
P
GND
Parasitic elements
P+
N
Example of Simple Monolithic IC Architecture
Vcc
Vcc
(Pin B)
Parasitic elements
or transistors
N
GND
P+
GND
C
Transistor (NPN)
10/11
N
N
P substrate
B
E
P
GND
P+
N
(Pin B)
(Pin A)
B
Technical Note
2011.03 - Rev.A
C
E
GND
Parasitic elements
or transistors
Parasitic elements