flc257mh-81 Eudyna Devices Inc, flc257mh-81 Datasheet

flc257mh-81

Manufacturer Part Number

flc257mh-81

Description

C-band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLC257MH-81.pdf (4 pages)

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Download datasheet (360Kb)

Edition 1.1

July 1999

CASE STYLE: MH

FEATURES

• High Output Power: P 1dB = 34.0dBm(Typ.)

• High Gain: G 1dB = 8.0dB(Typ.)

• High PAE: η add = 35%(Typ.)

• ProvenReliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC257MH-8 is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 200Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

g m

R th

Symbol

V p

V DS

V GS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS =600mA

V DS = 5V, I DS =50mA

I GS = -50µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 8.5 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

32.5

-1.0

7.0

-5

FLC257MH-8

-65 to +175

Rating

Limit

1000 1500

Typ.

34.0

175

-2.0

500

8.0

-5

G.C.P.: Gain Compression Point

Max.

-3.5

°C/W

dBm

Unit

°C

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flc257mh-81 Summary of contents

Page 1

... High PAE: η add = 35%(Typ.) • ProvenReliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC257MH-8 C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER +10V ≈ 0.6 I DSS f = 8.5 GHz 33 P out Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLC257MH-8 C-Band Power GaAs FET S 21 +90° 7 6GHz 8.5 8.5 9 0° .02 .04 .06 .08 -90° S22 MAG ANG .344 -157.2 .778 -174.5 ...

Page 4

... FLC257MH-8 C-Band Power GaAs FET 2-ø1.8±0.15 (0.071) Case Style "MH" Metal-Ceramic Hermetic Package 0.5 (0.020 3.5±0.3 (0.138) 6.7±0.2 (0.264) 10.0±0.3 (0.394) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) 4 0.1 (0.004) 1.65±0.15 (0.065) 2.8 Max (0.110) ...

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