flc107wg Eudyna Devices Inc, flc107wg Datasheet

flc107wg

Manufacturer Part Number

flc107wg

Description

C-band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLC107WG.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLC107WG

Manufacturer:

SYNERGY

Quantity:

5 000

Current page: 1 of 4
Download datasheet (343Kb)

Edition 1.1

July 1999

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

FEATURES

• High Output Power: P 1dB = 30.0dBm(Typ.)

• High Gain: G 1dB = 8.0dB(Typ.)

• High PAE: η add = 36%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC107WG is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

CASE STYLE: WG

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

1. The drain-source operating voltage (V DS ) should not exceed +10 volts.

2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 500Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

Symbol

g m

R th

V p

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 250mA

V DS = 5V, I DS = 20mA

I GS = -20µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 8 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

28.5

-1.0

7.0

-5

-65 to +175

Rating

FLC107WG

Limit

175

Typ.

30.0

7.5

400

200

-2.0

8.0

-5

G.C.P.: Gain Compression Point

Max.

-3.5

600

°C/W

dBm

Unit

°C

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flc107wg Summary of contents

Page 1

... High PAE: η add = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC107WG C-Band Power GaAs FET POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V ≈ 0.6 I DSS 6 GHz out η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 ...

Page 3

... Download S-Parameters, click here 3 FLC107WG S 21 +90° 2GHz 2GHz 0° .02 .04 .06 .08 -90° S22 MAG ANG .260 -61.5 .277 -91.4 ...

Page 4

... FLC107WG C-Band Power GaAs FET 2-Ø1.6±0.01 (0.063) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11 0.5 (0.020) 8.5±0.2 2.5 Max. (0.335) (0.098) 1. Gate 2. Source 3. Drain 6.1±0.1 4. Source (0.240) Unit: mm(inches) 4 0.1±0.05 (0.004) 0.8±0.1 (0.031) ...

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