flc167wf Eudyna Devices Inc, flc167wf Datasheet

flc167wf

Manufacturer Part Number

flc167wf

Description

C-band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLC167WF.pdf (4 pages)

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FLC167WF

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FLC167WF

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Edition 1.1

July 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

CASE STYLE: WF

FEATURES

• High Output Power: P 1dB = 31.8dBm(Typ.)

• High Gain: G 1dB = 7.5dB(Typ.)

• High PAE: η add = 35%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC167WF is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 200Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

Symbol

g m

R th

V p

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 400mA

V DS = 5V, I DS = 30mA

I GS = -30µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 6 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

30.5

-1.0

6.5

-5

-65 to +175

Rating

Limit

Typ.

175

31.8

7.5

600

300

-2.0

7.5

FLC167WF

-5

G.C.P.: Gain Compression Point

Max.

-3.5

900

°C/W

dBm

Unit

°C

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flc167wf Summary of contents

Page 1

... High PAE: η add = 35%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC167WF C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V ≈ 0.6 I DSS 30 P out Input Power (dBm) vs. DRAIN-SOURCE VOLTAGE 600 400 200 ...

Page 3

... Download S-Parameters, click here 3 FLC167WF S 21 +90° .08 2GHz .06 .04 3 .02 4 2GHz 5 5 0° -90° ...

Page 4

... FLC167WF C-Band Power GaAs FET Metal-Ceramic Hermetic Package Ø1.6±0.01 (0.063) Case Style "WF" 2.5 (0.098 0.1±0.05 0.6 (0.024) 8.5±0.2 (0.335) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) 6.1±0.1 (0.240) Unit: mm(inches) 4 (0.004) ...

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