pip3201-a NXP Semiconductors, pip3201-a Datasheet - Page 7

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pip3201-a

Manufacturer Part Number
pip3201-a
Description
Powermos Transistor Topfet High Side Switch
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
May 2001
PowerMOS transistor
TOPFET high side switch
Fig.4. High side switch measurements schematic.
Fig.6. Typical on-state characteristics, T
50
40
30
20
10
0
Fig.5. Typical on-state resistance, t
80
60
40
20
R
0
0
I
-50
L
ON
VBG
R
/ A
ON
= f(T
I
/ mOhm
L
(current and voltage conventions)
= f(T
j
); parameter V
0
VIG
j
); parameter V
VSG
V
BG
50
= 6 V
V
BL
1
T
j
RS
/ V
IS
/
BG
II
O
C
; condition I
BG
S
100
I
9 V =< V
; t
TOPFET
IG
IB
p
HSS
V
B
G
= 250 s
BG
/ V
BG
p
L
150
=< 35 V
= 300 s.
L
VBL
IL
> = 8
typ
= 10 A
j
= 25 ˚C.
VLG
.
2
7
6
5
200
7
40
38
36
34
32
30
28
26
24
22
20
I
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
G
Fig.8. Typical on-state resistance,T
Fig.7. Typical supply characteristics, 25 ˚C.
1
0
R
0
R
= f(T
I
BG(ON)
-50
ON
ON
Fig.9. Typical operating supply current.
I
G
/ mOhm
/ mA
= f(V
UNDERVOLTAGE
j
/ mA
); parameters I
10
SHUTDOWN
lL > IL(TO)
OPERATING V
l
l
L
L
> I
QUIESCENT V
BG
I
= 0 A
G
0
L(TO)
); condition I
= f(V
20
BG
); parameter V
50
30
IG
L
V
V
, V
IG
T
= 5 V
BG
BG
10
j
= 0 V
/
/ V
L
BG
/ V
O
OVERVOLTAGE
typ.
C
= 10 A; t
40
SHUTDOWN
; condition V
100
R
CLAMPING
ON
9 V <= V
max
50
IG
V
p
PIP3201-A
BG
= 300 s
150
j
BG
= 50 V
= 25 ˚C.
Product data
<= 35 V
60
IG
Rev 1.010
= 5 V
200
100
70

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