ncv8440stt3g ON Semiconductor, ncv8440stt3g Datasheet - Page 3

• Manufacturer Part Number: ncv8440stt3g
• Description: 2.6 A, 52 V, N Channel, Logic Level, Clamped Mosfet W/ Esd Protection
• Manufacturer: ON Semiconductor

MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (Note 3) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
GS
GS
DS
GS
GS
GS
= 0 V, I
= 0 V, I
= 40 V, V
= 40 V, V
= ±8 V, V
= ±14 V, V
= V
= 3.5 V, I
= 4.0 V, I
= 10 V, I
GS
, I
D
D
D
D
= 1.0 mA, T
= 1.0 mA, T
D
D
GS
GS
DS
= 100 mA)
= 2.6 A)
DS
= 0.6 A)
= 1.5 A)
= 0 V)
= 0 V)
= 0 V, T
= 0 V)
J
J
J
= 125°C)
= −40°C to 125°C)
= 25°C)
Characteristic
DS
= 15 V, I
V
V
DS
DS
D
= 2.6 A)
(T
= 35 V, V
= 25 V, V
f = 10 kHz
f = 10 kHz
J
= 25°C unless otherwise noted)
http://onsemi.com
GS
GS
= 0 V,
= 0 V,
3
V
Symbol
R
V
(BR)DSS
I
C
C
I
DS(on)
C
C
GS(th)
C
C
g
DSS
GSS
FS
oss
oss
rss
rss
iss
iss
50.8
Min
1.1
52
−9.3
−4.1
Typ
±35
135
150
155
170
1.5
3.8
55
54
95
60
25
70
30
Max
59.5
±10
180
160
110
1.9
59
10
25
mV/°C
mV/°C
Mhos
Unit
mW
mA
mA
pF
pF
V
V
V