ncv8402t3g ON Semiconductor, ncv8402t3g Datasheet - Page 2

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ncv8402t3g

Manufacturer Part Number
ncv8402t3g
Description
Self-protected Low Side Driver With Temperature And Current Limit
Manufacturer
ON Semiconductor
Datasheet
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
MAXIMUM RATINGS
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance
Single Pulse Drain−to−Source Avalanche Energy
(V
Load Dump Voltage
Operating Junction and Storage Temperature
DD
= 32 V, V
G
= 5.0 V, I
(T
PK
J
= 25°C unless otherwise noted)
= 1.0 A, L = 300 mH, R
+
VGS
I
(V
G
Figure 1. Voltage and Current Convention
GS
Rating
= 0 and 10 V, R
G(ext)
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
GATE
= 25 W)
http://onsemi.com
Junction−to−Tab Steady State (Note 3)
I
= 2.0 W, R
2
L
@ T
@ T
@ T
I
= 9.0 W, t
D
SOURCE
DRAIN
A
A
T
= 25°C (Note 1)
= 25°C (Note 2)
= 25°C (Note 3)
(R
G
d
= 1.0 MW)
= 400 ms)
VDS
Symbol
T
V
V
R
R
R
J
V
E
V
P
DGR
, T
DSS
I
qJA
qJA
qJT
GS
D
AS
LD
+
D
stg
−55 to 150
Value
Internally Limited
"14
150
114
1.1
1.7
8.9
42
42
72
14
87
°C/W
Unit
mJ
°C
W
V
V
V
V

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