lmd18200-mdc National Semiconductor Corporation, lmd18200-mdc Datasheet - Page 4

• Manufacturer Part Number: lmd18200-mdc
• Description: 3a, 55v H-bridge
• Manufacturer: National Semiconductor Corporation

www.national.com
Electrical Characteristics Notes
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond its rated operating conditions.
Note 2: See Application Information for details regarding current limiting.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is a function of T
dissipation at any temperature is P
junction to case (θ
Note 4: Human-body model, 100 pF discharged through a 1.5 kΩ resistor. Except Bootstrap pins (pins 1 and 11) which are protected to 1000V of ESD.
Note 5: All limits are 100% production tested at 25˚C. Temperature extreme limits are guaranteed via correlation using accepted SQC (Statistical Quality Control)
methods. All limits are used to calculate AOQL, (Average Outgoing Quality Level).
Note 6: Output currents are pulsed (t
Note 7: Regulation is calculated relative to the current sense output value with a 1A load.
Note 8: Selections for tighter tolerance are available. Contact factory.
Typical Performance Characteristics
JC
) is 1.0˚C/W and from junction to ambient (θ
V
SAT
Supply Voltage
R
vs Flag Current
DS
D(max)
(ON) vs
W
<
= (T
2 ms, Duty Cycle
J(max)
− T
A
)/θ
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JA
, or the number given in the Absolute Ratings, whichever is lower. The typical thermal resistance from
<
5%).
JA
) is 30˚C/W. For guaranteed operation T
4
R
J(max)
DS
J(max)
Supply Current vs
(ON) vs Temperature
Supply Voltage
= 125˚C.
, θ
JA
, and T
A
. The maximum allowable power
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