bts5236-2ek Infineon Technologies Corporation, bts5236-2ek Datasheet - Page 9

• Manufacturer Part Number: bts5236-2ek
• Description: Smart High-side Power Switch Profet
• Manufacturer: Infineon Technologies Corporation

Unless otherwise specified:
T
Pos.
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamic temperature increase
3.1.15 Storage Temperature
ESD Susceptibility
3.1.16 ESD susceptibility HBM
1)
2) Load Dump is specified in ISO 7637,
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
4) Pulse shape represents inductive switch off:
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm
6) According to AEC Q100, specific user approval is required for device level < 2kV HBM.
Note: Stresses above the ones listed here may cause permanent damage to the device.
Note: Integrated protection functions are designed to prevent IC destruction under fault
Datasheet
j
= 25 °C
R
operating range. Protection features are not designed for continuous repetitive operation.
layer, 70 μm thick) for
and
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
conditions described in the data sheet. Fault conditions are considered as
“outside” normal operating range. Protection functions are not designed for
continuous repetitive operation.
L
Parameter
while switching
describe the complete circuit impedance including line, contact and generator impedances.
V
bb
connection. PCB is vertical without blown air.
IN, SEN
R
6)
I
is the internal resistance of the Load Dump pulse generator.
OUT
IS
I
L
(t) =
Symbol
T
ΔT
T
V
j
stg
ESD
I
9
j
L
(0) * (1 -
Smart High-Side Power Switch
t
Limit Values Unit Test
min.
/
-40
-55
-1
-2
-4
t
–
pulse
); 0 <
max.
Electrical Characteristics
150
150
t
60
1
2
4
<
2
t
pulse
copper heatsinking area (one
.
°C
°C
°C
kV
Rev. 1.0, 2008-11-26
BTS5236-2EKA
Conditions