ncp5304 ON Semiconductor, ncp5304 Datasheet - Page 4

• Manufacturer Part Number: ncp5304
• Description: Dual Inputs High Voltage High And Low-side Mosfet Or Igbt Drivers
• Manufacturer: ON Semiconductor

1. Parameter guaranteed by design
2. Turn-off propagation delay @ Vbridge = 600 V is guaranteed by design
3. See characterization curve for Δt parameters variation on the full range temperature.
4. Both Integrated a dead time will be mesured and characterised. The first when IN_HI changes (High to Low and Low to High), and the second
5. Timing diagram definition see: Figure 5 and Figure 6.
Output high short circuit pulsed current V
Output low short circuit pulsed current V
Output resistor (Typical value @ 25°C) Source
Output resistor (Typical value @ 25°C) Sink
High level output voltage, V
Low level output voltage V
Turn-on propagation delay (Vbridge = 0 V)
Turn-off propagation delay (Vbridge = 0 V or 50 V) (Note 2)
Output voltage rise time (from 10% to 90% @ Vcc = 15 V) with 1 nF load
Output voltage fall time (from 90% to 10% @V
Propagation delay matching between the High side and the Low side
@ 25°C (Note 3)
Internal fixed dead time (Note 4)
Minimum input width that changes the output
Maximum input width that does not change the output
Low level input voltage threshold
Input pull-down resistor (V
High level input voltage threshold
Logic “1” input bias current @ V
Logic “0” input bias current @ V
Vcc UV Start-up voltage threshold
Vcc UV Shut-down voltage threshold
Hysteresis on Vcc
Vboot Start-up voltage threshold reference to bridge pin
(Vboot_stup = Vboot - Vbridge)
Vboot UV Shut-down voltage threshold
Hysteresis on Vboot
Leakage current on high voltage pins to GND
(V
Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on
both driver outputs)
Consumption in inhibition mode (Vcc = Vboot)
Vcc current consumption in inhibition mode
Vboot current consumption in inhibition mode
ELECTRICAL CHARACTERISTIC
OUTPUT SECTION
DYNAMIC OUTPUT SECTION
INPUT SECTION
SUPPLY SECTION
BOOT
when HI_LO changes (High to Low and Low to High). These parameters will be updated after the characterization results.
= V
BRIDGE
= DRV_HI = 600 V)
DRV_XX
IN
BIAS
< 0.5 V)
-V
IN_XX
IN_XX
@ I
DRV_XX
Rating
= 5 V @ 25°C
= 0 V @ 25°C
DRV_XX
DRV
(V
DRV
@ I
CC
= Vcc, PW v 10 ms (Note 1)
= 0 V, PW v 10 ms (Note 1)
= 20 mA
DRV_XX
CC
= V
= 15 V) with 1 nF load
boot
= 15 V, V
= 20 mA
http://onsemi.com
GND
NCP5304
= V
4
bridge
, -40°C < T
Vboot_shtdwn
Vboot_shtdwn
Vcc_shtdwn
Vboot_stup
I
Vcc_stup
Vcc_hyst
DRVsource
I
Symbol
I
V
HV_LEAK
V
DRVsink
ICC1
ICC2
ICC3
ICC4
DRV_H
t
t
R
R
DRV_L
t
t
PW1
PW2
V
R
V
I
I
OFF
DT
ON
Dt
IN+
IN-
OH
tr
tf
OL
IN
IN
IN
J
< 125°C, Outputs loaded with 1 nF)
Min
2.3
8.0
7.3
0.3
8.0
7.3
0.3
65
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
J
-40°C to 125°C
Typ
250
500
100
100
100
200
250
200
0.7
0.2
8.9
8.2
0.7
8.9
8.2
0.7
30
10
85
35
20
50
-
-
-
-
5
-
5
4
Max
170
170
160
190
400
1.6
0.6
0.8
2.0
9.9
9.1
9.9
9.1
60
20
75
35
50
25
40
-
-
-
-
-
-
-
5
-
-
Units
mA
mA
mA
kW
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
W
W
V
V
V
V
V
V
V
V
V
V