s-93c46a Seiko Instruments Inc., s-93c46a Datasheet
s-93c46a
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s-93c46a Summary of contents
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... Contents Features .............................................................. 1 Pin Assignment ................................................... 1 Pin Functions ...................................................... 1 Block Diagram ..................................................... 2 Instruction Set ..................................................... 2 Absolute Maximum Ratings................................. 2 Recommended Operating Conditions ................. 3 Pin Capacitance .................................................. 3 Endurance........................................................... 3 DC Electrical Characteristics ............................... 4 AC Electrical Characteristics ............................... 5 Operation ............................................................ 6 Receiving a Start-Bit............................................ 13 Three-wire Interface (DI-DO direct connection) ... 13 Dimensions (Unit : mm) ....................................... 14 Ordering Information ........................................... 17 Characteristics..................................................... 18 Frequently Asked Questions................................ 23 ...
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... The S-93C46A/56A/66A is high speed, low power 1K/2K/4K-bit E with a wide operating voltage range organized as 64-word 16-bit, 128- word 16-bit, 256-word 16-bit, respectivly. read, at which time addresses are automatically incremented in 16-bit blocks. The instruction code is compatible with the NM93CS46/56/66. Ÿ ...
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... Power supply voltage Input voltage Output voltage Storage temperature under bias Storage temperature 2 Address Memory array decoder Data register Mode decode logic Clock generator Figure 2 Table 2 Start Op Address Bit Code S-93C46A S-93C56A S-93C66A ...
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... CC V =1 opr Table 5 Symbol Conditions Min OUT OUT Table 6 Symbol Min. Typ Seiko Instruments Inc. CMOS SERIAL E S-93C46A/56A/66A Min. Typ. Max. Unit 1.8 5.5 V 2.5 5.5 V 2.0 Vcc V Vcc V Vcc V 0.0 0.8 V 0.0 0.2 Vcc V 0.0 0.15 Vcc V -40 +85 °C (Ta=25 °C, f=1.0 MHz, V ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A n DC Electrical Characteristics Parameter Smbl Current I DO unloaded consumption CC1 (READ) Current I DO unloaded consumption CC2 (PROGRAM) Parameter Smbl Standby current CS=GND DO=Open I SB consumption Connected to V Input leakage I V =GND current Output leakage I V =GND to V ...
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... SV t — 4.0 10.0 — 4 SKL SKH Valid data HZ2 Figure 3 Read Timing Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A V =1.8 to 2.5V CC Unit — 1.0 — — s — 0 — — s — 0.4 — — s — 0.4 — — s — 0.4 — — s 1.0 — ...
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... Figure 4 Read Timing (S-93C46A ...
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... Figure 6 Read Timing (S-93C66A) Max.), and the typical write period is less than 5 ms. In the S- PR Seiko Instruments Inc. CMOS SERIAL E S-93C46A/56A/66A ...
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... CDS D15 D0 t Hi-Z Figure 7 WRITE Timing (S-93C46A D15 Hi-Z Figure 8 WRITE Timing (S-93C56A ...
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... CDS Hi Figure 10 ERASE Timing (S-93C46A Hi-Z Figure 11 ERASE Timing (S-93C56A ...
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... Hi CDS D15 D0 1 4Xs t SV Figure 13 WRAL Timing (S-93C46A D15 1 6Xs Figure 14 WRAL Timing (S-93C56A D15 1 6Xs Figure 15 WRAL Timing (S-93C66A) Seiko Instruments Inc. ...
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... CDS 4Xs Figure 16 ERAL Timing (S-93C46A 6Xs Figure 17 ERAL Timing (S-93C56A 6Xs Figure 18 ERAL Timing (S-93C66A) Seiko Instruments Inc. ...
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... Write enable (EWEN) and Write disable (EWDS) The EWEN instruction puts the S-93C46A/56A/66A into write enable mode, which accepts WRITE, ERASE, WRAL, and ERAL instructions. The EWDS instruction puts the S-93C46A/56A/66A into write disable mode, which refuses WRITE, ERASE, WRAL, and ERAL instructions. ...
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... IC will interfere with the data output from the CPU with a 3-wire interface, install a resistor between DI and DO in order to give preference to data output from the CPU to DI(See Figure 22). CPU S-93C46A/56A/66A SIO 10k 100k Figure 22 Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A “ ” high . Therefore, only after a write 13 ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A n Dimensions (Unit : mm) 1. 8-pin DIP 9.3 (9.6 max.) S-93C46ADP S-93C56ADP 8 S-93C66ADP 1 1.0 2.54 Markings 6.5 4 1.5 3.4 0.1 4.5 max. 3.1 min. 0.4 min. 0.3 0.5 0.1 Figure (Blank Product name Assembly code Year of assembly (Last digit of the year Month of assembly ( 11 12 ...
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... Lot No. (Last four digits of the Lot No.) Figure Product name “S93C46D” “S93C56D” “S93C66D” Assembly code 9 : Year of assembly (Last digit of the year Month of assembly (“ Y,and Z” Lot No. (Last four digits of the Lot No.) Figure 27 Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A 0.60 0.20 0.20 0.05 15 ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A 3. 8-pin TSSOP S-93C46AFT S-93C56AFT S-93C66AFT Markings +0.30 3.0 -0. 4.4 0.2 6.4 0 1.10max. 0 0.1 0.65 0.20 0.10 Figure 28 1 :Assembly code 4 2 :Year of assembly (Last digit of the year :Lot No. (abbreviation :Product name “S93C46” 10 “S93C56” “S93C66” Figure 29 Seiko Instruments Inc ...
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... Lot No. (abbreviation) Figure DIP FJ : SOP1 DFJ : SOP2 FT : TSSOP MFN : MSOP S-93C46A: 1K bits S-93C56A: 2K bits S-93C66A: 4K bits Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A 0.45 0.2 0.13 0.1 “46M” case of “S-93C46A” “56M” case of “S-93C56A” “66M” case of “S-93C66A” 17 ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A n Chracteristics 1. DC Characteristics 1.1 Current consumption (READ) I CC1 Ambient temperature MHz SK DATA=0101 0.4 I CC1 (mA) 0 (°C) 1.3 Current consumption (READ) I CC1 Ambient temperature =10 KHz SK DATA=0101 0.4 I CC1 (mA) 0 (°C) 1.5 Current consumption (READ) I ...
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... Output leakage current I Ambient temperature Ta V DO 0.5 0 -40 1.16 High level output voltage V Ambient temperature 4.6 V 4.4 OH (V) 4.2 -40 Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A — CC2 (V) CC — (°C) — (°C) — OH =4.5 V ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A 1.17 High level output voltage V — OH Ambient temperature =-100 A OH 2.7 V 2.6 OH (V) 2.5 - (°C) 1.19 High level output voltage V — OH Ambient temperature 1.9 V 1.8 OH (V) 1.7 - (°C) 1.21 Low level output voltage V — OL Ambient temperature ...
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... Low level output current I Ambient temperature (mA - (°C) 1.28 Input voltage Power supply voltage V Ta=25°C CS, SK, DI 3.0 V INV (V) 1 Seiko Instruments Inc. 2 CMOS SERIAL E PROM S-93C46A/56A/66A — — (V) 21 ...
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... CMOS SERIAL E PROM S-93C46A/56A/66A 2. AC Characteristics 2.1 Maximum operating frequency f max Power supply voltage V CC Ta=25° max (Hz) 100K 10K (V) CC 2.3 Program time t — PR Ambient temperature (ms - (°C) 2.5 Program time t — PR Ambient temperature ...
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... Division name Category Memory Category Serial EEPROM Cal No.: S-93C46A/56A/66A Related documents: Question: What about the basic term (dummy clock)? Answer: Dummy clock Competing manufacturers have released products that require “0” input (dummy clocks) before the start bit (see FAQ). In SII’ ...
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... Division name Category 1: 12 Memory Category 2: 2. Serial EEPROM Cal No.: S-93C46A/56A/66A Related documents: Question: What about the basic term (start bit)? Answer: Start bit serial 3-wire bus EEPROM (a 2-wire bus type is used for the start condition) When a command is issued the 3-wire bus EEPROM must obtain “1” from a DI input in order to recognize this command (this is a rule) ...
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... Division name Category 1: 12 Memory Category 2: 2. Serial EEPROM Cal No.: S-93C46A/56A/66A Related documents: Question: What about the equivalent circuit for I/O terminals? Answer: Equivalent circuit for I/O terminals Users may require a circuit for I/O terminals, as they may desire to establish a circuit configuration and anti-static measures for the application based on circuit information ...
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... TEST Data output signal Internal OE signal <Remarks> FAQ No.: 12013 26 DO ...
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... Related documents: Question: What about the reliability and quality of the EEPROM? Answer: 1. The EEPROM must have a quality that is “special in a sense” and that differs from that of the other ICs. <What is this special quality?> (1) Number of possible rewrites: 105 or 106 A specified minimum number of data rewrites must be assured. ...
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... Data rewrite refers to the injection or removal of electrons into or from the FG. In this process, electrons pass through a thin oxide film (UTO). The oxide film inherently acts as an insulator, but in this case the film conducts electricity (electrons are transferred). [Data retention] Data retention refers to the prevention of leakage of electrons stored in the FG ...
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... All EEPROMS, including ours, may malfunction (false-writes may occur) due to an “operation in a low- voltage region upon power-on/off” or “improper recognition of a command due to a noise signal.” This defect is particularly common in the voltage region of the microcomputer transmitting commands to the EEPROM, where the voltage is lower than the lowest operating voltage of the microcomputer ...
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... Applications of the EEPROM The applications of the EEPROM can be roughly divided into the following types: - Tuning memory, mode setting, ID codes: Arbitrary data can easily be rewritten and data can be retained during power-off. - Replacement of a DIP switch (from a mechanical to an electronic switch): User costs are substantially reduced ...
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... S-93Cx6A, S-29xx0A, S-24C series [Mobile telephones] Personal ID, telephone-number data, address data, adjustment data S-24C series [Pagers] Personal ID, telephone-number data, address data S-93Cx6A, S-29Z series, S-24C series [PC cards] LAN cards and modem cards, replacement of dip switches, software data S-93C46A, S-29, S-24C series <Remarks> FAQ No.: 12021 31 ...
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... DO pin” and a “method for monitoring the output condition of the Ready/Busy pin.” This function eliminates the need to wait 10 ms for writing to be completed, thereby minimizing the write time according to the performance of the IC (performance value ...
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... This function can improve the efficiency of write commands and reduce writing time. Ex.:S-24C04B ( 512 addresses x 8 bits) 16-byte page write function Writing in addresses: A write time of 10 msec. x 512 = 5.1 sec. is required. Page write: 10 msec. x 512 / 16 = 320 msec. However, compatibility with products from other companies must be confirmed. ...
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... This is an input pin used to enter a test mode when tests are conducted during an SII inspection process. This information is not provided to users. It can be used with a GND or Vcc connection open state (see note). This is important in maintaining compatibility with the pin layouts of other companies ...
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... Answer: [Malfunction of the EEPROM] (key words: false-store(illegal data) The EEPROM may malfunction (false-store) due to power-on/off or noise from the microcomputer. The defect rate, however the order of ppm. Even though, this could be a serious problem for the users and to the applications. - This problem essentially results from users’ ...
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... As shown in Fig. 1, activate the power voltage starting from a maximum of 0 that the power voltage reaches the operating value within the time specified as tRISE. If the operating power voltage is, for example, 5.0 V, tRISE = 200 ms, as shown in Fig. 2. Thus, the power voltage must be activated within 200 ms. ...
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... Initialize time tinit The EEPROM is instantly initialized when the power voltage is activated. Since the EEPROM does not accept commands during initialization, the transmission of commands to the EEPROM must be started after this initialization time period. Fig. 3 shows the time required to initialize the EEPROM. ...
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... EEPROM and microcomputer. If the voltage of the microcomputer is higher, a current may flow from the output terminal of the microcomputer to the power line of the EEPROM via a parasitic diode in the DO pin of the EEPROM. Therefore, the power voltage of the EEPROM has an intermediate potential to prevent power-on from being cleared. ...
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... CS input is changed from [WRITE Hi-Z DO Case in which, during a command entry changed from with a timing that differs by a predetermined minimum number of clocks. Date: 98/11/12 (Thursday) 10:17 (modified: 99/01/13) Activation of SK obtaining ...
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... In the case of a write command, if the number of clocks is smaller than the predetermined value, data is loaded changed from D15 to D0. When, for example shifted from after three clocks, data, which would otherwise have been stored in D15 to D13, is stored D0, while undefined data is stored on the upper side a storage state in which the internal logic has been changed to either ...
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... Question: EEPROM compatibility table, cross reference Answer: EEPROM compatibility table Product name Key word S-29130ADPA EE,1KB,DIP,3W S-93C46ADP S-29130AFJA-TB EE,1KB,SOP1,3W S-93C46AFJ-TB S-29130ADFJA-TB EE,1KB,SOP2,3W S-93C46ADFJ-TB S-29131ADPA EE,1KB,DIP,3W,PROT S-29131AFJA-TB EE,1KB,SOP1,3W,PROT S-29220ADPA EE,2KB,DIP,3W S-29220AFJA-TB EE,2KB,SOP1,3W S-29220ADFJA-TB EE,2KB,SOP2,3W S-29221ADPA EE,2KB,DIP,3W,PROT S-29221AFJA-TB EE,2KB,SOP1,3W,PROT ...
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... S-24C04AFJA-TB-01 EE,4KB,SOP,2W S-24C08ADPA-01 EE,8KB,DIP,2W S-24C08AFJA-TB-01 EE,8KB,SOP,2W S-24C16ADPA-01 EE,16KB,DIP,2W S-24C16AFJA-TB-01 EE,16KB,SOP,2W S-29L130AFE-TB EE,1KB,SOP1,3W,L/V S-29L130ADFE-TB EE,1KB,SOP2,3W,L/V S-29L131ADFE-TB EE,1KB,SOP2,3W,L/V,PROT S-29L220AFE-TB EE,2KB,SOP1,3W,L/V S-29L220ADFE-TB EE,2KB,SOP2,3W,L/V S-29L221ADFE-TB EE,2KB,SOP2,3W,L/V,PROT S-29L330AFE-TB EE,4KB,SOP1,3W,L/V S-29L330ADFE-TB EE,4KB,SOP2,3W,L/V S-29L331ADFE-TB EE,4KB,SOP2,3W,L/V,PROT <Remarks> FAQ No.: 12007 NM24C04(05)LEM8 AT24C04N-10SI-2.5 NM24C08(09)LEN AT24C08-10PI-2.5 NM24C08(09)LEM8 AT24C08N-10SI-2 ...
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... S-29xx1A and S-29x94A protect 50% of memory, starting with the leading address. CS, /CS (/CS: S-29x55A, S-29x94A input pin used to select the execution of a command selected using “H” and deselected using “L” (the reverse is true for /CS) /CS is useful on the interface of the microcomputer (L active is mainly used for the microcomputer). ...
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... FAQ No.: 12006 44 ...
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... Concept of the compatibility, features, and markets of the S-29 series Answer: [Compatibility of the EEPROM] In terms of memory, most SII EEPROMs are compatible with our competitors’ standard products in their operation codes. If another company’s product replaced by a corresponding SII product, the DC/AC specifications desired by the user must be carefully determined. ...
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... Question: How are operation codes classified? A: [EEPROM operation codes] In the serial EEPROM, the operation codes can be classified into several types. Our competitors have released products compatible with each type of operation code. The key words of the operation codes are given below. 3-wire ...
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... IICBUS. TV set maker will be main market. 4. SPI: The key word is “25C.” Not compatible with SII. Under development. Composed of four pins: three input pins CS, SCK, and SI, and an input pin SO. In the case of the EEPROM, the advantages are high speed (5 MHz at 5v) and a high capacity (128 Kbytes). ...
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... Program enable, EWES or PEN Enables write operations (WRITE) [Note] When the power to the EEPROM is turned on, the internal circuit of the IC is reset and the program disable mode is entered. Thus, following power-on, the program enable command must be entered in order to write data. Date: 98/11/12 (Thursday) 10:17 (modified: 99/01/13(Wednesday)) ...
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... Memory space: In the case of the S-29130A (64 words X 16 bits) Address <Remarks> FAQ No.: 12003 Data Memory space in which a command can be used to write 64 words data freely 49 ...
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... What about the basic terms. (continuous read, sequential read)? Answer: - Continuous read, sequential read Function by which data is read from a specified address using a read command, followed by the output of the next address. This is useful when there is a large amount of user data (ex.: ID codes ...
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... FAQ No.: 12002 51 ...
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... Answer: 1. Electrically Erasable Programmable Read Only Memory - Why this memory is referred to as “read only” despite the fact that it enables data to be rewritten? The EEPROM requires a longer time for writing than a RAM used exclusively for reading. - What is the “memory”? Elements storing data. Data is generally represented by the digits “ ...