m48z58 STMicroelectronics, m48z58 Datasheet

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m48z58

Manufacturer Part Number
m48z58
Description
5v, 64kbit 8kbit X 8 Zeropower Sram
Manufacturer
STMicroelectronics
Datasheet

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Features
November 2007
Integrated, ultra low power SRAM, power-fail
control circuit, and battery
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE
protection
WRITE protect voltages:
(V
– M48Z58: V
– M48Z58Y: V
Self-contained battery in the CAPHAT™ DIP
package
Packaging includes a 28-lead SOIC and
SNAPHAT
SOIC package provides direct connection for a
SNAPHAT top which contains the battery
Pin and function compatible with JEDEC
standard 8Kbit x 8 SRAMs
RoHS compliant
– Lead-free second level interconnect
PFD
4.5V
4.2V
= Power-fail deselect voltage)
V
V
®
PFD
PFD
top (to be ordered separately)
CC
CC
= 4.75 to 5.5V
4.75V
4.5V
= 4.5 to 5.5V
5V, 64Kbit (8Kbit x 8) ZEROPOWER
Rev 8
28
28
Battery CAPHAT
SNAPHAT (SH)
PCDIP28 (PC)
SOH28 (MH)
1
battery
1
M48Z58Y
M48Z58
®
SRAM
www.st.com
1/23
1

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m48z58 Summary of contents

Page 1

... Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages Power-fail deselect voltage) PFD – M48Z58 4.75 to 5.5V CC 4.5V V 4.75V PFD – M48Z58Y 4.5 to 5. ...

Page 2

Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

... The M48Z58 non-volatile pin and function equivalent to any JEDEC standard SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin, 600mil DIP CAPHAT™ ...

Page 6

... DQ4 DQ3 AI01177B A12 A11 M48Z58Y A10 DQ7 DQ0 11 18 DQ6 DQ1 12 17 DQ5 DQ2 13 16 DQ4 DQ3 AI01178B ...

Page 7

Figure 4. Block diagram LITHIUM CELL VOLTAGE SENSE SWITCHING POWER AND V PFD CIRCUITRY V CC A0-A12 DQ0-DQ7 SRAM ARRAY AI01394 7/23 ...

Page 8

... SO 2.1 Read mode The M48Z58 the READ Mode whenever W (WRITE Enable) is high, E (Chip Enable) is low. Thus, the unique address specified by the 13 Address Inputs defines which one of the 8,192 bytes of data accessed. Valid data will be available at the Data I/O pins within Address Access time (t and G access times are also satisfied ...

Page 9

... Write mode The M48Z58 the WRITE Mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge WRITE is terminated by the earlier rising edge The addresses must be held valid throughout the cycle must return high for a minimum of t prior to the initiation of another READ or WRITE cycle ...

Page 10

Figure 6. Write enable controlled, write mode AC waveforms A0-A12 E W DQ0-DQ7 Figure 7. Chip enable controlled, write mode AC waveforms A0-A12 tAVEL E W DQ0-DQ7 10/23 tAVAV VALID tAVWH tAVEL tWLWH tAVWL tWLQZ DATA INPUT tDVWH tAVAV VALID ...

Page 11

... V of the power supply lines is recommended. When V drops below V CC preserves data. The internal button cell will maintain data in the M48Z58/Y for an accumulated period of at least 10 years when V As system power returns and V power supply is switched to external V exceeds V (max) ...

Page 12

V noise and negative going transients CC I transients, including those produced by output switching, can produce voltage CC fluctuations, resulting in spikes on the V capacitors are used to store energy which stabilizes the V bypass capacitors will ...

Page 13

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 5. ...

Page 14

... Designers should check that the operating M48Z58 ) 4. 100 1.5 5V DEVICE UNDER TEST includes JIG capacitance (1)(2) Parameter Min Table 6: M48Z58Y 4 100 1.5 1.9k OUT 100pF or 5pF AI01030 Max Unit Unit V ° ...

Page 15

Table 8. DC characteristics Symbol Parameter I Input leakage current LI (2) I Output leakage current LO I Supply current CC I Supply current (standby) TTL CC1 I Supply current (standby) CMOS CC2 V Input low voltage IL V Input ...

Page 16

... PFD V Battery back-up switchover voltage SO (3) t Expected data retention time DR 1. All voltages referenced Valid for ambient operating temperature: T noted 25° 0V. CC 16/23 (1)(2) Parameter Min M48Z58 4.5 M48Z58Y 4 70° 4.75 to 5.5V or 4.5 to 5.5V (except where A CC Typ Max Unit 4.6 4.75 V 4.35 4.5 V 3.0 V YEARS ...

Page 17

Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...

Page 18

Figure 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package outline B Note: Drawing is not to scale. Table 12. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ ...

Page 19

Figure 13. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 13. SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data Symbol Typ ...

Page 20

Figure 14. SH –4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 14. SH – 4-pin SNAPHAT housing for 120mAh battery, pack. mech. data Symb Typ ...

Page 21

... E = ECOPACK package, tubes F = ECOPACK package, tape & reel For PCDIP28: blank = ECOPACK package, tubes 1. The M48Z58 part is offered with the PCDIP28 (ie., CAPHAT™) package only. 2. The SOIC package (SOH28) requires the SNAPHAT the part number “M4Zxx-BR00SH1” in plastic tubes (see Caution: Do not place the SNAPHAT battery package “ ...

Page 22

Revision history Table 17. Document revision history Date Revision March 1999 10-Feb-2000 22-Feb-2000 14-Sep-2001 29-May-2002 16-Sep-2002 02-Apr-2003 23-Mar-2004 23-Nov-2004 09-Jun-2005 14-Dec-2005 06-Nov-2007 22/23 1.0 First issue 1.1 2-socket SOH and 2-pin SH packages removed 1.2 Data retention mode paragraph ...

Page 23

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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