is62wv25616all Integrated Silicon Solution, Inc., is62wv25616all Datasheet - Page 8

• Manufacturer Part Number: is62wv25616all
• Description: 256k X 16 Low Voltage, Ultra Low Power Cmos Static Sram
• Manufacturer: Integrated Silicon Solution, Inc.

IS62WV25616ALL, IS62WV25616BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to
2. The internal write time is defined by the overlap of CS1 LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Symbol
t
t
t
t
t
t
t
t
t
t
t
V
can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
wc
scs1
aw
ha
sa
Pwb
Pwe
sd
hd
hzwe
lzwe
dd
8
-0.2V/V
(3)
(3)
dd
Parameter
Write Cycle Time
CS1 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
-0.3V and output loading specified in Figure 1.
Integrated Silicon Solution, Inc. — www.issi.com —
Min.
45
45
—
(1,2)
55
45
40
25
0
0
0
5
(Over Operating Range)
55 ns
Max.
20
—
—
—
—
—
—
—
—
—
—
Min.
70
60
60
60
30
50
—
0
0
0
5
70 ns
Max.
—
—
—
—
—
—
—
—
—
20
—
1-800-379-4774
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
03/03/2008
Rev. D