is62wv102416all Integrated Silicon Solution, Inc., is62wv102416all Datasheet

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is62wv102416all

Manufacturer Part Number
is62wv102416all
Description
1m X 16 High-speed Low Power Asynchronous Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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Part Number:
is62wv102416all-35MLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
is62wv102416all-35MLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
1M x 16 HIGH-SPEED LOW POWER
ASYNCHRONOUS CMOS STATIC RAM
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
01/18/08
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FUNCTIONAL BLOCK DIAGRAM
FEATURES
• High-speed access times:
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
• Easy memory expansion with CS1 and OE
• CS1 power-down
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single power supply
• Packages available:
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
noise immunity
options
required
V
speed = 35ns for V
V
speed = 25ns for V
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
25, 35 ns
DD
DD
1.65V to 2.2V (IS62WV102416ALL)
2.4V to 3.6V (IS62/65WV102416BLL)
DD
DD
1.65V to 2.2V
2.4V to 3.6V
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A19
VDD
GND
CS1
WE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
MEMORY ARRAY
ISSI
COLUMN I/O
1024K x 16
IS62WV102416ALL/BLL and IS65WV102416BLL
JANUARY 2008
ISSI
's high-perform-
1

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is62wv102416all Summary of contents

Page 1

... Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply V 1.65V to 2.2V (IS62WV102416ALL) DD speed = 35ns for V 1.65V to 2. 2.4V to 3.6V (IS62/65WV102416BLL) DD speed = 25ns for V 2 ...

Page 2

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1Mx16 LOW POWER PIN CONFIGURATIONS 48-Pin mini BGA (9mmx11mm CS1 I I GND I/O A17 A7 I I/O VDD I/O NC A16 12 F I/O A14 I/O I/O A15 I/O A19 A12 A13 15 H A18 A8 A10 A9 A11 PIN DESCRIPTIONS ...

Page 3

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 48-pin TSOP-I (12mm x 20mm CS1 7 I/O0 8 I/O1 9 I/O2 10 I/O3 11 VDD 12 GND 13 I/O4 14 I/O5 15 I/ A19 20 A18 21 A17 22 A16 23 A15 24 PIN DESCRIPTIONS A0-A19 Address Inputs I/O0-I/O15 Data Inputs/Outputs CS1 Chip Enable Input OE Output Enable Input ...

Page 4

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL TRUTH TABLE CS1 CS1 CS1 WE WE CS1 CS1 Mode Not Selected Output Disabled Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM ...

Page 5

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL OPERATING RANGE (V ) (IS62WV102416ALL) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C OPERATING RANGE (V ) (IS62WV102416BLL) DD Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. ...

Page 6

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL DC ELECTRICAL CHARACTERISTICS V = 2.4V-3.6V DD Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage IL I Input Leakage LI I Output Leakage LO Note (min.) = –0.3V DC; V (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. ...

Page 7

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL AC TEST CONDITIONS (HIGH SPEED) Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load AC TEST LOADS OUTPUT Figure 1. Integrated Silicon Solution, Inc. — www.issi.com Rev. A 01/18/08 Unit (2.4V-3.6V) (1.65V-2.2V) 0. -0.3V ...

Page 8

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I OUT Operating V CC Supply Current I OUT V I TTL Standby Current (TTL Inputs) V CS1 V I CMOS Standby CS1 V Current (CMOS Inputs Note: 1 ...

Page 9

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CS1/CS2 Access Time t t ACS1/ ACS2 OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CS1/CS2 to High-Z Output ...

Page 10

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL AC WAVEFORMS (1,3) (CS1, CS2, OE, AND UB/LB Controlled) READ CYCLE NO. 2 ADDRESS OE CS1 s CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1, UB Address is valid prior to or coincident with CS1 LOW transition ...

Page 11

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time WC CS1/CS2 to Write End t t SCS1/ SCS2 t Address Setup Time to Write End AW t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width t (4) ...

Page 12

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL (WE Controlled HIGH During Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN SCS1 t SCS2 PWE HZWE ...

Page 13

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL WRITE CYCLE NO. 4 (UB/LB Controlled) ADDRESS OE CS1 LOW HIGH CS2 WE UB HZWE D OUT DATA UNDEFINED D IN Integrated Silicon Solution, Inc. — www.issi.com Rev. A 01/18/ ADDRESS 1 ADDRESS PBW WORD 1 HIGH DATA ...

Page 14

... IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical values are measured DATA RETENTION WAVEFORM V DD 1.65V 1. CS1 GND DATA RETENTION WAVEFORM ...

Page 15

... IS62WV102416BLL-25MI IS62WV102416BLL-25MLI IS62WV102416BLL-25TI IS62WV102416BLL-25TLI Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) Order Part No. 35 IS62WV102416ALL-35MI IS62WV102416ALL-35MLI IS62WV102416ALL-35TI IS62WV102416ALL-35TLI Automotive Range: -40°C to +125°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No. 25 IS65WV102416BLL-25MA3 IS65WV102416BLL-25TA3 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 01/18/08 Package ...

Page 16

... E 11.8 12.2 0.464 0.480 e 0.50 BSC L 0.50 0.70 0.020 0.028 0° 5° Integrated Silicon Solution, Inc. PK13197T48 Rev. B 07/17/ Inches Min Max Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protru- — ...

Page 17

... SEATING PLANE Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 18

... Leads — 0.047 A — — 0.012 A1 0.24 — — A2 0.60 D 10.90 11.00 11. 8.90 9.00 9. 0.30 0.35 0.40 Integrated Silicon Solution, Inc. — www.issi.com — INCHES Min. Typ. Max. 48 — 1.20 — — 0.047 — 0.30 0.009 — 0.012 — — 0.024 — — 0.429 0.433 0.437 5.25BSC 0.207BSC 0.350 0.354 0.358 3 ...

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