at28c256f-25um883 ATMEL Corporation, at28c256f-25um883 Datasheet

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at28c256f-25um883

Manufacturer Part Number
at28c256f-25um883
Description
At28c256 256k 32k X 8 Paged Parallel Eeprom
Manufacturer
ATMEL Corporation
Datasheet
Features
1. Description
The AT28C256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
The AT28C256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
Fast Read Access Time – 150 ns
Automatic Page Write Operation
Fast Write Cycle Times
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
– 50 mA Active Current
– 200 µA CMOS Standby Current
– Endurance: 10
– Data Retention: 10 Years
4
or 10
5
Cycles
256K (32K x 8)
Paged Parallel
EEPROM
AT28C256
0006K–PEEPR–01/08

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at28c256f-25um883 Summary of contents

Page 1

... Description The AT28C256 is a high-performance electrically erasable and programmable read- only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac- tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 200 µ ...

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Pin Configurations Pin Name A0 - A14 I/ 2.1 28-lead TSOP Top View OE 1 A11 A13 VCC 7 A14 8 A12 9 A7 ...

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... The AT28C256 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either high. This dual-line control gives designers flexibility in preventing bus contention in their system ...

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... WC 4.7 Device Identification An extra 64 bytes of EEPROM memory are available to the user for device identification. By rais- ing A9 to 12V ± 0.5V and using address locations 7FC0H to 7FFFH the additional bytes may be written to or read from in the same manner as the regular memory array. 4.8 Optional Chip Erase Mode The entire device can be erased using a 6-byte software code. Please see “ ...

Page 5

DC and AC Operating Range Ind. Operating Temperature (Case) Mil. V Power Supply CC 6. Operating Modes Mode Read (2) Write Standby/Write Inhibit Write Inhibit Write Inhibit Output Disable Chip Erase Notes can ...

Page 6

AC Read Characteristics Symbol Parameter t Address to Output Delay ACC ( Output Delay CE ( Output Delay OE (3)( Output Float DF Output Hold from OE, CE ...

Page 7

Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% ...

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AC Write Characteristics Symbol Parameter Address, OE Setup Time AS OES t Address Hold Time AH t Chip Select Setup Time CS t Chip Select Hold Time CH t Write Pulse Width (WE or CE) WP ...

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... A6 through A14 must specify the same page address during each high to low transition of WE (or CE must be high only when WE and CE are both low. 18. Chip Erase Waveforms µsec (min msec (min 12.0V ± 0.5V H 0006K–PEEPR–01/08 Min AT28C256 AT28C256F 100 50 (1)(2) AT28C256 Max Units ...

Page 10

Software Data Protection (1) Enable Algorithm LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 WRITES ENABLED LOAD DATA XX TO (4) ANY ADDRESS LOAD LAST BYTE TO LAST ADDRESS ...

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Data Polling Characteristics Symbol Parameter t Data Hold Time Hold Time OEH ( Output Delay OE t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See“AC ...

Page 12

Normalized I Graphs CC AT28C256 12 0006K–PEEPR–01/08 ...

Page 13

Ordering Information 27.1 Standard Package I (mA ACC (ns) Active Standby 150 50 0.2 0.3 200 50 0.3 250 50 0.3 28D6 28-lead, 0.600" Wide, Non-windowed, Ceramic Dual Inline Package (Cerdip) 28F 28-lead, Non-windowed, Ceramic Bottom-brazed Flat ...

Page 14

Standard Package (Continued) I (mA ACC (ns) Active Standby (3) 150 50 0.3 28D6 28-lead, 0.600" Wide, Non-windowed, Ceramic Dual Inline Package (Cerdip) 28F 28-lead, Non-windowed, Ceramic Bottom-brazed Flat Package (Flatpack) 32J 32-lead, Plastic J-leaded Chip Carrier ...

Page 15

Standard Package (Continued) I (mA ACC (ns) Active Standby (3) 150 50 0.3 (3) 200 50 0.3 50 0.3 (3) 250 50 0.3 28D6 28-lead, 0.600" Wide, Non-windowed, Ceramic Dual Inline Package (Cerdip) 28F 28-lead, Non-windowed, Ceramic ...

Page 16

Standard Package (Continued) I (mA ACC (ns) Active Standby 250 50 0.3 300 50 0.3 50 0.3 350 50 0.3 50 0.3 Notes: 1. Electrical specifications for these speeds are defined by Standard Microcircuit Drawing 5962-88525. 2. ...

Page 17

Green Package Option (Pb/Halide-free) I (mA ACC (ns) Active Standby 150 50 0.2 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing Small ...

Page 18

... AT28C256E 20 AT28C256F 20 AT28C256 25 AT28C256E 25 AT28C256F 25 29. Die Products Reference Section: Parallel EEPROM Die Products AT28C256 18 Package and Temperature Combinations JI, JU, PI, PU, SI, SU, TI, TU, DM/883, FM/883, LM/883, UM/883 JI, JU, PI, PU, SI, SU, TI, TU, DM/883, FM/883, LM/883, UM/883 JI, JU, PI, PU, SI, SU, TI, TU, DM/883, FM/883, LM/883, UM/883 ...

Page 19

Packaging Information 29.1 28D6 – Cerdip Dimensions in Millimeters and (Inches). Controlling dimension: Inches. MIL-STD 1835 D-10 Config A (Glass Sealed) 5.72(0.225) MAX SEATING PLANE 5.08(0.200) 3.18(0.125) 2.54(0.100)BSC 0.46(0.018) 0.20(0.008) 2325 Orchard Parkway San Jose, CA 95131 R 0006K–PEEPR–01/08 37.85(1.490) ...

Page 20

Flatpack Dimensions in Millimeters and (Inches). Controlling dimension: Inches. MIL-STD 1835 F-12 Config B PIN #1 ID 18.49(0.728) 18.08(0.712) 10.57(0.416) 0.23(0.009) 0.10(0.004) 2325 Orchard Parkway San Jose, CA 95131 R AT28C256 20 9.75(0.384) 1.96(0.077) 1.09(0.043) 7.26(0.286) 6.96(0.274) ...

Page 21

PLCC 1.14(0.045) X 45˚ 0.51(0.020)MAX 45˚ MAX (3X) Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is .010"(0.254 mm) per ...

Page 22

LCC Dimensions in Millimeters and (Inches). Controlling dimension: Inches. MIL-STD 1835 C-12 14.22(0.560) 13.72(0.540) 10.16(0.400) BSC 1.27(0.050) TYP 2325 Orchard Parkway San Jose, CA 95131 R AT28C256 22 11.63(0.458) 11.23(0.442) PIN 1 1.40(0.055) 1.14(0.045) 2.41(0.095) 1.91(0.075) 0.305(0.012) ...

Page 23

PDIP A SEATING PLANE Notes: 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed ...

Page 24

SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 2325 Orchard Parkway San Jose, CA 95131 R AT28C256 24 0.51(0.020) 0.33(0.013) 7.60(0.2992) 7.40(0.2914) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 0.30(0.0118) 0.10(0.0040) 0º ~ 8º 1.27(0.050) ...

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TSOP Pin 1 Identifier Area e E Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion 0.15 mm per side and on ...

Page 26

PGA Dimensions in Millimeters and (Inches). Controlling dimension: Inches. 16.71(0.658) 16.31(0.642) 2325 Orchard Parkway San Jose, CA 95131 R AT28C256 26 13.74(0.540) 2.57(0.101) 13.36(0.526) 2.06(0.081) 15.24(0.600) 14.88(0.586) 14.17(0.558) 13.77(0.542) 2.54(0.100) TYP 12.70(0.500) TYP 2.54(0.100) TYP 10.41(0.410) 9.91(0.390) ...

Page 27

... Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. © 2008 Atmel Corporation. All rights reserved. Atmel Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. International Atmel Asia ...

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