ca3227m96 Intersil Corporation, ca3227m96 Datasheet

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ca3227m96

Manufacturer Part Number
ca3227m96
Description
High-frequency Npn Transistor Array For Low-power Applications At Frequencies Up To 1.5ghz
Manufacturer
Intersil Corporation
Datasheet
High-Frequency NPN Transistor Array For
Low-Power Applications at Frequencies
Up to 1.5GHz
The CA3227 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
transistors exhibits a value of f
them useful from DC to 1.5GHz. The monolithic construction
of these devices provides close electrical and thermal
matching of the five transistors.
Ordering Information
CA3227E
CA3227M
(3227)
CA3227M96
(3227)
NUMBER
(BRAND)
PART
RANGE (
-55 to 125
-55 to 125
-55 to 125
TEMP.
o
C)
TM
16 Ld SOIC Tape
16 Ld PDIP
16 Ld SOIC
and Reel
1
T
in excess of 3GHz, making
PACKAGE
1-888-INTERSIL or 321-724-7143
Data Sheet
E16.3
M16.15
M16.15
PKG. NO.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
|
Intersil and Design is a trademark of Intersil Corporation.
Features
• Gain-Bandwidth Product (f
• Five Transistors on a Common Substrate
Applications
• VHF Amplifiers
• VHF Mixers
• Multifunction Combinations - RF/Mixer/Oscillator
• IF Converter
• IF Amplifiers
• Sense Amplifiers
• Synthesizers
• Synchronous Detectors
• Cascade Amplifiers
Pinout
SUBSTRATE
May 2000
1
2
3
4
5
6
7
8
(PDIP, SOIC)
Q
Q
TOP VIEW
CA3227
2
3
T
) . . . . . . . . . . . . . . . . . >3GHz
|
File Number
Q
Copyright
Q
Q
1
5
4
16
15
14
13
12
11
10
9
©
Intersil Corporation 2000
CA3227
1345.5

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ca3227m96 Summary of contents

Page 1

... RANGE ( C) PACKAGE CA3227E -55 to 125 16 Ld PDIP CA3227M -55 to 125 16 Ld SOIC (3227) CA3227M96 -55 to 125 16 Ld SOIC Tape (3227) and Reel 1 1-888-INTERSIL or 321-724-7143 May 2000 Features • Gain-Bandwidth Product (f • Five Transistors on a Common Substrate Applications • VHF Amplifiers • ...

Page 2

Absolute Maximum Ratings Collector to Emitter Voltage ( CEO Collector to Base Voltage ( ...

Page 3

Electrical Specifications PARAMETER DYNAMIC CHARACTERISTICS FOR EACH TRANSISTOR Input Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Input Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Small Signal Forward Current Transfer Ratio TYPICAL CAPACITANCE ...

Page 4

Typical Performance Curves 160 150 140 130 120 110 100 6V 0.1 1.0 I (mA) C FIGURE COLLECTOR CURRENT FE ...

Page 5

Die Characteristics DIE DIMENSIONS: 46 mils x 32 mils Metallization Mask Layout (15) (16) (1) (2) 5 CA3227 CA3227 (13) (14) (12) (11) (3) (4) (5) (6) SUBSTRATE (10) (9) (8) (7) ...

Page 6

Dual-In-Line Plastic Packages (PDIP INDEX N/2 AREA -B- -A- D BASE PLANE -C- SEATING PLANE 0.010 (0.25 NOTES: 1. Controlling Dimensions: INCH. In case of ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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