tle6389 Infineon Technologies Corporation, tle6389 Datasheet - Page 3

• Manufacturer Part Number: tle6389
• Description: Step - Down Dc/dc Controller
• Manufacturer: Infineon Technologies Corporation

Pin No
SO-14
Target Datasheet Rev. 1.7
13
11
14
12
10
1
4
6
8
9
7
5
Symbol
SI_ENA
BLE
VS
GND
SI_GND
BDS
CS
GDRV
RO
RD
SO
SI
SYNC
Function
SI Enable Input. SI_GND is switched to high impedance when SI_Enable
is low. High level at SI_Enable connects SI_GND to GND via a low
impedance path. SO is undefined when SI_Enable is low. (TLE6389G50-
1, TLE6389G33-1 only)
Supply Input. Bypass with 0.47µF.
Ground. Analog signal ground.
SI Ground. Ground connection for SI comparator resistor devider.
Buck Driver Supply Input. Connect ceramic capacitor between BDS and
VS to generate clamped gate-source voltage to drive the PMOS power
stage.
Current-Sense Input. Connect current-sense resistor between VS and
CS. External MOSFET is turned off when the voltage across the resistor
equals the current-limit trip level.
Gate Drive Output for External P-Channel MOSFET. GDRV swings
between VS and BDS.
Reset Output. Open drain output from reset comparator with an internal
pull up resistor.
Reset Delay. Connect a capacitor to ground for delay time adjustment.
Sense Output Comparator. Open drain output from SI comparator with
an internal pull up resistor.
Sense Input Comparator. Input to the Low-Battery Comparator. This
input is compared to an internal 1.25V reference.
Input for external synchronization. An external clock signal connected
to this pin allows for GDRV switching synchronization.
3
TLE 6389
2001-09-17